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Other articles related with "TN3":
5719
Tan Yaxiong, Zhang Mengyang, Liu Yuan, Wu Jianfa
A High-Precision SiC MOSFET Model with Continuous Function Description
Transactions of China Electrotechnical Society 2024 Vol.39 (18): 5719-5731 [
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71
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1 KB] [
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0 KB] (
3
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3691
Wang Yanhao, Deng Erping, Wang Zuoyi, Li Daohui, Huang Yongzhang
The Influence Mechanism of Humidity on the Chip Solder Layer Thermal Resistance of Power Semiconductor Devices
Transactions of China Electrotechnical Society 2024 Vol.39 (12): 3691-3704 [
Abstract
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91
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1 KB] [
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18521 KB] (
162
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1074
Ren Hongyu, Yu Yaoyi, Du Xiong, Liu Junliang, Zhou Junjie
IGBT Lifetime Prediction Model Based on Optimized Long Short-Term Memory Neural Network
Transactions of China Electrotechnical Society 2024 Vol.39 (4): 1074-1086 [
Abstract
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96
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1 KB] [
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1979 KB] (
730
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4947
Wang Laili, Zhao Cheng, Zhang Tongyu, Yan Feifei
Review of Packaging Technology for Silicon Carbide Power Modules
Transactions of China Electrotechnical Society 2023 Vol.38 (18): 4947-4962 [
Abstract
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881
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1 KB] [
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14261 KB] (
555
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2850
Peng Cheng, Li Xuebao, Fan Jiayu, Zhao Zhibin, Cui Xiang
Effect of Stray Inductance Difference on Transient Current Distribution in Press-Pack IGBT Devices
Transactions of China Electrotechnical Society 2023 Vol.38 (11): 2850-2860 [
Abstract
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155
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1 KB] [
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9629 KB] (
342
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1900
Liu Jiye, Zheng Zedong, Li Chi, Wang Kui, Li Yongdong
An Indirect Series-Connected SiC MOSFET Power Module with Voltage Self-Balance
Transactions of China Electrotechnical Society 2023 Vol.38 (7): 1900-1909 [
Abstract
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188
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1 KB] [
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26686 KB] (
513
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131
Ren Hongyu, Yu Yaoyi, Du Xiong, Liu Junliang, Zhou Junjie
IGBT Lifetime Prediction Model Based on Optimized Long Short-Term Memory Neural Network
Transactions of China Electrotechnical Society 0 Vol. (): 131-131 [
Abstract
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105
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1 KB] [
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903 KB] (
422
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5214
Li Xin, Luo Yifei, Shi Zenan, Wang Ruitian, Xiao Fei
An Improved Physics-Based Circuit Model for SiC MOSFET
Transactions of China Electrotechnical Society 2022 Vol.37 (20): 5214-5226 [
Abstract
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692
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1 KB] [
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3816 KB] (
1249
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4911
Shang Hai, Liang Lin, Wang Yijian, Yang Yingjie
Weighted Optimization Design and Experimental Study of 6.5kV SiC MOSFET Module
Transactions of China Electrotechnical Society 2022 Vol.37 (19): 4911-4922 [
Abstract
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162
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1 KB] [
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27145 KB] (
568
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4664
Zhao Fangwei, Li Yan, Wei Chao, Zhang Nan, Zheng Yanxuan
Accurate Measurement of Dynamic on-Resistance of GaN Devices and Affecting Factor Analysis
Transactions of China Electrotechnical Society 2022 Vol.37 (18): 4664-4675 [
Abstract
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784
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2952 KB] (
835
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3845
Zhang Yubin, Wen Yingke, Ruan Lin
Research on Electrothermal Coupling Model of Fully-Immersed Evaporative Cooling IGBT
Transactions of China Electrotechnical Society 2022 Vol.37 (15): 3845-3856 [
Abstract
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210
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1 KB] [
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4661 KB] (
1150
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3016
Cai Yumeng, Zhao Zhibin, Xu Zike, Sun Peng, Li Xuebao
Error Analysis and Regulation Method of Impedance Analyzer in Measuring Split
C
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V
Characteristics of Power MOSFET Device
Transactions of China Electrotechnical Society 2022 Vol.37 (12): 3016-3027 [
Abstract
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241
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1 KB] [
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3376 KB] (
822
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244
Zhao Zixuan, Chen Jie, Deng Erping, Li Anqi, Huang Yongzhang
The Influence and Failure Mechanism Analysis of the Load Current on the IGBT Lifetime with Bond Wire Failure
Transactions of China Electrotechnical Society 2022 Vol.37 (1): 244-253 [
Abstract
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275
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1 KB] [
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6555 KB] (
1267
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2471
Peng Cheng, Li Xuebao, Zhang Guanrou, Zhao Zhibin, Cui Xiang
Design and Implementation of an Experimental Platform for Dynamic Characteristics of Press-Pack IGBT Chip
Transactions of China Electrotechnical Society 2021 Vol.36 (12): 2471-2481 [
Abstract
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275
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1 KB] [
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10628 KB] (
713
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341
Zhuang Guiyuan, Zhang Xing, Liu Wei, Zhuang Jiacai
Overvoltage and Overcurrent Protection of SiC MOSFET in Three-Level Topology with Flying Capacitor
Transactions of China Electrotechnical Society 2021 Vol.36 (2): 341-351 [
Abstract
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322
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1 KB] [
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123758 KB] (
1331
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1952
Jia Yingjie, Xiao Fei, Luo Yifei, Liu Binli, Huang Yongle
Multi-Rate Electro-Thermal Simulation Method for High Power IGBT Based on Field-Circuit Coupling
Transactions of China Electrotechnical Society 2020 Vol.35 (9): 1952-1961 [
Abstract
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491
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1 KB] [
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32847 KB] (
693
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310
Jia Yingjie, Luo Yifei, Xiao Fei, Liu Binli, Huang Yongle
An Equivalent Electrical Resistance Model of IGBT Suitable for Ohm’s Law
Transactions of China Electrotechnical Society 2020 Vol.35 (2): 310-317 [
Abstract
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226
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1 KB] [
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43095 KB] (
765
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528
Yuan Cuiping, Liu Shulin, Zhao Qian, Zhang Shaoxiong, Pei Jinjun
Research of Drive Circuit with Active Discharging Technology for Power PMOS
Transactions of China Electrotechnical Society 2019 Vol.34 (zk2): 528-533 [
Abstract
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279
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1 KB] [
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12302 KB] (
955
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3408
Zhou Jing, Kang Shengyang, Li Hui, Yao Ran, Li Jinyuan
Simulation of Influence of Unbalanced Clamping Force on Electro-Thermal Characteristics of Press-Pack IGBT Devices
Transactions of China Electrotechnical Society 2019 Vol.34 (16): 3408-3415 [
Abstract
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244
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57699 KB] (
823
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717
Wang Xuemei, Zhang Bo, Wu Haiping
A Review of Fatigue Mechanism of Power Devices Based on Physics-of-Failure
Transactions of China Electrotechnical Society 2019 Vol.34 (4): 717-727 [
Abstract
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324
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1 KB] [
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49712 KB] (
681
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275
Li Hui, Huang Zhangjian, Liao Xinglin, Zhong Yi, Wang Kun
An Improved SiC MOSFET Gate Driver Design for Crosstalk Suppression in a Phase-Leg Configuration
Transactions of China Electrotechnical Society 2019 Vol.34 (2): 275-285 [
Abstract
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448
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1 KB] [
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93797 KB] (
952
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4277
Zhang Jingwei, Deng Erping, Zhao Zhibin, Li Jinyuan, Huang Yongzhang
Simulation on Fatigue Failure of Single IGBT Chip Module of Press-Pack IGBTs
Transactions of China Electrotechnical Society 2018 Vol.33 (18): 4277-4285 [
Abstract
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286
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1 KB] [
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47388 KB] (
674
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4286
Wang Yueyue, Chen Minyou, Lai Wei, Chen Yigao, Luo Dan
Healthy Condition Assessment on MOSFETs Based on External Characteristic Parameters and Adaptive Neuro-Fuzzy Inference System
Transactions of China Electrotechnical Society 2018 Vol.33 (18): 4286-4294 [
Abstract
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285
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1 KB] [
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46425 KB] (
895
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3564
Zhang Lei, Cao Xin, Deng Zhiquan, Zhou Jingxing
A Fault-Tolerant Control Strategy for Open Circuit in Single-Winding Bearingless Switched Reluctance Motor
Transactions of China Electrotechnical Society 2018 Vol.33 (15): 3564-3571 [
Abstract
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226
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1 KB] [
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22371 KB] (
571
)
1472
Zhao Yongbing, Cheng Zhe, Zhang Yun, Yi Xiaoyan, Wang Guohong
400V Normally-off Recessed MOS-Gate AlGaN/GaN HEMT with High Threshold Voltage and Ultra-Low Gate-Leakage Current
Transactions of China Electrotechnical Society 2018 Vol.33 (7): 1472-1477 [
Abstract
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452
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1 KB] [
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16387 KB] (
822
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1302
Jin Miaoxin, Gao Qiang, Xu Dianguo
A 200℃ Silicon Carbide MOSFET Gate Driving Circuit Based on Bipolar Junction Transistor
Transactions of China Electrotechnical Society 2018 Vol.33 (6): 1302-1311 [
Abstract
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394
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1 KB] [
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990 KB] (
1254
)
162
Liang Mei, Li Yan, Zheng Trillion Q, Zhao Hongyan
Analysis for Crosstalk of SiC MOSFET with Different Packages in a Phase-Leg Configuration and a Low Gate Turn-Off Impedance Driver
Transactions of China Electrotechnical Society 2017 Vol.32 (18): 162-174 [
Abstract
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847
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1 KB] [
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1542 KB] (
2040
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183
Liu Binli, Xiao Fei, Luo Yifei, Wang Bo, Xiong Youxing
Investigation into the Health Condition Monitoring Method of IGBT Based on Collector Leakage Current
Transactions of China Electrotechnical Society 2017 Vol.32 (16): 183-193 [
Abstract
] (
570
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1 KB] [
PDF
582 KB] (
1944
)
1
Liu Binli, Luo Yifei, Xiao Fei, Wang Bo
IGBT Thermal Model for Thermal Simulation of Device to System
Transactions of China Electrotechnical Society 2017 Vol.32 (13): 1-13 [
Abstract
] (
573
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1 KB] [
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48586 KB] (
1011
)
50
Wang Bo, Luo Yifei, Liu Binli, Pu Jing
Transient Mathematical Model of Trench Field-Stop IGBT
Transactions of China Electrotechnical Society 2017 Vol.32 (12): 50-57 [
Abstract
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486
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1 KB] [
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18381 KB] (
922
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