压接型IGBT器件内部杂散电感差异对瞬态电流分布影响规律研究

doi:10.19595/j.cnki.1000-6753.tces.220044

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Abstract The parallel connection of several chips in the PPI device is an important means to improve its current level. However, the transient current imbalance between IGBT chips is one of the main reasons that limit its current increase. It is important to study the transient current distribution in the PPI IGBT device for the package design. The existing research usually adopts the simulation method, but it does not consider the internal physical process of IGBT, and the simulation results often have a big deviation from the experimental results. In this paper, an integrated circuit model containing the package stray inductance and the internal physical characteristics of IGBT is established, and the influence law of the stray inductance on the current distribution is obtained. After that, the validity of the simulation results is verified by the double-pulse experiment platform.
Firstly, three stray inductances inside the 3.3 kV/1 500 A PPI device are extracted, and the differences in stray inductances under different IGBT chip positions are obtained. It is found that the maximum difference of emitter stray inductance is 15.36 nH and the change rate of emitter stray inductance is 43.43%, the maximum difference of gate stray inductance is 8.84 nH and the change rate of gate stray inductance is 11.22%. Secondly, three stray inductance differences are analyzed in theory, it is found that the current imbalance of IGBT chips is mainly affected by emitter stray inductance on the common branch of the power circuit and drive circuit. At the same time, the carrier behavior inside IGBT is analyzed, and it is found that the difference of emitter stray inductance mainly affects the current imbalance in the turn-on process. Then, an IGBT integrated simulation circuit is established in the simulation software, which includes the packaged stray inductance and the internal physical characteristics of IGBT chips. The difference of each stray inductance is calculated, and the influence rule of each stray inductor difference on the current distribution is obtained. When the difference between gate stray inductances L_G and collector stray inductances L_Cis set separately, there is no obvious difference between the IGBT chip current. Only when the emitter inductance L_E is different, the current distribution phenomenon will be obvious in the turn-on process. Through the calculation, the simulation results can correspond well with the theoretical analysis. Finally, a double pulse experiment platform with two parallel chips is established. The difference in stray inductance is realized by sliding the busbar. The stray inductance range of the double-branch experimental platform (23.1~49.7 nH) can reflect the stray inductance range of the real PPI device (35.36~50.72 nH). Through experiments, it is found that the current of the two chips is relatively uniform in the turn-off process, while the current is different in the turn-on process. The current difference increases with the increase of the stray inductance difference. When the busbar connection point is P1, the current of IGBT1 reaches 91.45 A and that of IGBT2 is 56.39 A, the difference is 35.06 A. The current imbalance rate reaches 23.7%, and the experimental results further verify the validity of theoretical analysis and simulation results
The following conclusions can be drawn from the simulation analysis: (1) Different positions of IGBT chips in PPI have different stray inductances. Taking 3.3 kV/1 500 A as an example, the maximum change rate of emitter stray inductance is 43.43% and the change rate of gate stray inductance is 11.22%. (2) The current imbalance of IGBT chips is mainly affected by the difference in emitter inductance. Through the circuit analysis, it is found that the emitter inductance affects the change rate of V_GE, thus affecting the current sharing among IGBT chips. (3) Both external characteristics and internal carrier behavior of IGBT chips are considered, it is found that the difference of emitter stray inductance mainly affects the current imbalance in the turn-on process, but hardly affects the turn-off process.

Key words： Press-pack IGBT device transient current sharing power path drive path stray inductance

Received: 11 January 2022

PACS:	TN307
	TM46

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	Peng Cheng
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	Fan Jiayu
	Zhao Zhibin
	Cui Xiang

Cite this article:

Peng Cheng,Li Xuebao,Fan Jiayu等. Effect of Stray Inductance Difference on Transient Current Distribution in Press-Pack IGBT Devices[J]. Transactions of China Electrotechnical Society, 2023, 38(11): 2850-2860.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.220044 OR https://dgjsxb.ces-transaction.com/EN/Y2023/V38/I11/2850

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