基于全碳化硅功率组件的变流器母排杂散电感解析计算方法

doi:10.19595/j.cnki.1000-6753.tces.L90080

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Abstract The high switching speed of silicon carbide (SiC) devices makes them more sensitive to stray parameters and easily excites high-frequency oscillations and overshoot. Therefore, it is necessary to accurately calculate the stray inductance of the power circuit, and the busbar inductance is the most critical. This paper first analyzes and compares existing busbar models, and proposes a calculation method of busbar inductance that takes into account the skin effect. On this basis, based on finite element simulation, the influence of spatial geometric parameters, device layout and busbar openings on the busbar inductance is quantitatively analyzed. Moreover, through the least squares approximation, the analytical calculation formula for the inductance of the busbar with multiple different structures is obtained. Finally, this method is used to calculate the bus inductance of the 1 200V/423A SiC MOSFET test platform, and the results are compared with Ansys Q3D simulation results and experimental results. It is shown that this method has high practicality and accuracy in calculating the stray inductance of high-power converter laminated busbars, which can provide useful support for the application research of SiC MOSFETs and the layout design of laminated busbars.

Key words： Laminated busbars stray inductance analytical calculation double-pulse-test

Received: 20 June 2020

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TM46

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	Liu Bo
	Liu Weizhi
	Dong Kan
	Ma Qiang
	Diao Lijun

Cite this article:

Liu Bo,Liu Weizhi,Dong Kan等. Analytical Calculation Method for Stray Inductance of Converter Busbar Based on Full Silicon Carbide Power Module[J]. Transactions of China Electrotechnical Society, 2021, 36(10): 2105-2114.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L90080 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I10/2105

[1] Millan J, Godignon P, Perpina X, et al.A survey of wide bandgap power semiconductor devices[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2155-2163.
[2] Yin Shaobo, Xia Jinhui, Zhao Zhen, et al.Fast restarting of free-running induction motors under speed-sensorless vector control[J]. IEEE Transactions on Industrial Electronics, 2020, 67(7): 6124-6134.
[3] Diao Lijun, Du Huiqing, Shu Zhan, et al.A comparative study between AI-HM and SPD-HM for railway auxiliary inverter with pulsating DC link[J]. IEEE Transactions on Industrial Electronics, 2017, 65(7): 5816-5825.
[4] 张建忠, 吴海富, 张雅倩, 等. 一种SiC MOSFET谐振门极驱动电路[J]. 电工技术学报, 2020, 35(16): 3453-3459.
Zhang Jianzhong, Wu Haifu, Zhang Yaqian, et al.A resonant gate driver for SiC MOSFET[J]. Transa- ctions of China Electrotechnical Society, 2020, 35(16): 3453-3459.
[5] 王莉娜, 马浩博, 袁恺, 等. SiC MOSFET半桥电路开关瞬态过电流、过电压建模与影响因素分析[J]. 电工技术学报, 2020, 35(17): 3652-3665.
Wang Lina, Ma Haobo, Yuan Kai, et al.Modeling and analysis of influencing factors of transient over- current and overvoltage in SiC MOSFET half-bridge circuit switches[J]. Transactions of China Electrotechnical Society, 2020, 35(17): 3652-3665.
[6] 朱义诚, 赵争鸣, 王旭东, 等. SiC MOSFET与SiC SBD换流单元瞬态模型[J]. 电工技术学报, 2017, 32(12): 58-69.
Zhu Yicheng, Zhao Zhengming, Wang Xudong, et al.Transient model of switching unit between SiC MOSFET and SiC SBD[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 58-69.
[7] Sakairi H, Yanagi T, Otake H, et al.Measurement methodology for accurate modeling of SiC MOSFET switching behavior over wide voltage and current ranges[J]. IEEE Transactions on Power Electronics, 2018, 33(9): 7314-7325.
[8] 江师齐, 刘艺涛, 银杉, 等. 基于噪声源阻抗提取的单相逆变器电磁干扰滤波器的设计[J]. 电工技术学报, 2019, 34(17): 3552-3562.
Jiang Shiqi, Liu Yitao, Yin Shan, et al.Design of electromagnetic interference filter for single-phase inverter based on noise source impedance extra- ction[J]. Transactions of China Electrotechnical Society, 2019, 34(17): 3552-3562.
[9] 谢佳季, 游小杰, 郭希铮, 等. 基于SiC MOSFET的辅助变流器应用研究[J]. 电源学报, 2017, 15(2): 67-76.
Xie Jiaji, You Xiaojie, Guo Xizheng, et al.Appli- cation of auxiliary converter based on SiC MOSFET[J]. Journal of Power Supply, 2017, 15(2): 67-76.
[10] Shi Yuliang, Xie Ren, Wang Lu, et al.Switching characterization and short-circuit protection of 1200V SiC MOSFET T-type module in PV inverter appli- cation[J]. IEEE Transactions on Industrial Electronics, 2017, 64(11): 9135-9143.
[11] 金祝锋, 李威辰, 胡斯登, 等. 大容量电力电子装置中母排杂散电感提取方法的优化研究[J]. 电工技术学报, 2017, 32(14): 1-7.
Jin Zhufeng, Li Weichen, Hu Sideng, et al.Optimi- zation study of bus bar stray inductance extraction method in large-capacity power electronic devices[J]. Transactions of China Electrotechnical Society, 2017, 32(14): 1-7.
[12] Reigosa P D, Iannuzzo F, Luo H, et al.A short-circuit safe operation area identification criterion for SiC MOSFET power modules[J]. IEEE Transactions on Industry Applications, 2017, 53(3): 2880-2887.
[13] Hazra S, Madhusoodhanan S, Moghaddam G K, et al.Design considerations and performance evaluation of 1200V 100A SiC MOSFET-based two-level voltage source converter[J]. IEEE Transactions on Industry Applications, 2016, 52(5): 4257-4268.
[14] 刘欣, 王利桐, 梁贵书, 等. 压装组件中圆柱形母线的部分电感计算方法[J]. 电工技术学报, 2020, 35(增刊1): 1-9.
Liu Xin, Wang Litong, Liang Guishu, et al.Com- puting method for partial inductance of cylindrical busbar conductor[J]. Transactions of China Electro- technical Society, 2020, 35(S1): 1-9.
[15] Ruehli, Albert E, Antonini, et al. Skin-effect loss models for time- and frequency-domain PEEC Solver[J]. Proceedings of the IEEE, 2013, 101(2): 451-472.
[16] 阮杰, 刘畅, 李广卓, 等. 适用于器件并联型ANPC拓扑的低感叠层母排设计方法[J]. 高电压技术, 2019, 45(7): 2093-2100.
Ruan Jie, Liu Chang, Li Guangzhuo, et al.A low inductance laminated bus design method for device parallel ANPC topology[J]. High Voltage Engineering, 2019, 45(7): 2093-2100.
[17] Caponet M C, Profumo F, De Doncker R W, et al. Low stray inductance bus bar design and construction for good EMC performance in power electronic circuits[J]. IEEE Transactions on Power Electronics, 2000, 17(2): 225-231.
[18] 刘峰, 马伯乐, 杨光. 大功率变流器模块主电路杂散电感分析[J]. 机车电传动, 2013, 1(6): 15-19.
Liu Feng, Ma Bole, Yang Guang.Stray inductance analysis of main circuit of high-power converter module[J]. Locomotive Electric Drive, 2013, 1(6): 15-19.
[19] 朱俊杰, 原景鑫, 聂子玲, 等. 基于全碳化硅功率组件的叠层母排优化设计研究[J]. 中国电机工程学报, 2019, 39(21): 6383-6393.
Zhu Junjie, Yuan Jingxin, Nie Ziling, et al.Research on optimal design of laminated busbars based on full silicon carbide power modules[J]. Proceedings of the CSEE, 2019, 39(21): 6383-6393.