GaN器件动态导通电阻精确测试与影响因素分析

doi:10.19595/j.cnki.1000-6753.tces.211710

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Abstract Compared with traditional Si devices, GaN devices have the advantages of high voltage and high temperature resistance, small on-resistance and low switching loss. However, the dynamic on-resistance of GaN devices has become the main reliability problem that limits their large-scale application. Based on the affecting factor analysis of the dynamic on-resistance, this paper proposes a comprehensive test platform and test method. The dynamic on-resistance under several affecting factors of three GaN devices with same voltage/current level and different structures is tested. The proportion of affecting factors and the change of dynamic on-resistance are analyzed. The mechanism analysis is verified by being compared with experimental results. Finally, the application methods of GaN devices with low dynamic on-resistance are given. The proposed test platform covers most of the affecting factors of dynamic on-resistance in practical applications. The experimental results show that the dynamic on-resistance characteristics and the dominant affecting factors are different with different device structures. Optimizing the dynamic on-resistance from the application level can effectively reduce the conduction loss.

Key words： GaN devices current collapse effect dynamic on-resistance accurate test optimized application method

Received: 28 October 2021

PACS:	TM46
	TN30

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	Articles by authors
	Zhao Fangwei
	Li Yan
	Wei Chao
	Zhang Nan
	Zheng Yanxuan

Cite this article:

Zhao Fangwei,Li Yan,Wei Chao等. Accurate Measurement of Dynamic on-Resistance of GaN Devices and Affecting Factor Analysis[J]. Transactions of China Electrotechnical Society, 2022, 37(18): 4664-4675.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.211710 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I18/4664

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