|
|
|
| A High-Precision SiC MOSFET Model with Continuous Function Description |
| Tan Yaxiong, Zhang Mengyang, Liu Yuan, Wu Jianfa |
| State Key Laboratory of Power Transmission Equipment Technology Chongqing University Chongqing 400044 China |
|
|
|
Abstract An accurate and effective SiC MOSFET device model forms the foundation for engineering circuit pre-design and analysis. Currently, most well-developed MOSFET models are based on Si. Due to the differences in their physical structures, Si-based modeling approaches are only partially suitable for SiC MOSFET modeling and often encounter convergence issues. It is noted that most manufacturers' simulation models are comparatively basic and significantly deviate from the genuine features of SiC MOSFETs. This paper proposes a high-precision SiC MOSFET simulation model described by continuous functions to improve accuracy and convergence simultaneously. Additionally, the required data for modeling can be obtained directly from the datasheet, reducing modeling complexity.
A method for constructing a continuous function for SiC MOSFET static drain current is proposed based on the shape characteristics of the static characteristic curves. Sub-functions of the model are considered separately based on output and transfer characteristic curve features, and a target function for the model is obtained through mathematical methods. The continuous function model ensures the convergence of the model. Traditional parasitic capacitance fitting functions are improved to address significant slope variations in the transfer capacitance curve that are difficult to fit. An equivalent circuit model for parasitic capacitance with a convergence resistor is proposed. Parameterization is applied to the diode model current source expression, considering temperature and gate-source negative voltage. All these model parameter extraction methods are based on the Levenberg-Marquardt algorithm and a general global optimization method. In addition, accurate extraction of the SiC MOSFET datasheet’s operating curves is required.
Comparisons with the operating curves in the datasheet verify the accuracy of the static model. Experimental results from a 300 V/30 A dual-pulse test for C2M0025120D at different operating temperatures (25℃ and 150℃) confirm the consistency between the dynamic model and the actual dynamic characteristics. Furthermore, the developed model is successfully applied in a cascaded H-bridge seven-level inverter using PSpice simulation, confirming the model’s convergence.
In conclusion, the following findings can be drawn: (1) The model obtained through the proposed static modeling method can accurately describe the actual static characteristics of SiC MOSFET devices. The Pearson correlation coefficient for the static model exceeds 0.99. (2) Introducing the convergence resistor in the parasitic capacitance model effectively improves the model’s convergence. (3) The improved transfer capacitance fitting function can accurately describe the transfer capacitance characteristics, reducing fitting errors. The Pearson correlation coefficient of the fitting is 0.988 7. (4) The body diode model considering junction temperature and gate-source negative voltage can enhance model accuracy and applicability. (5) The turn-on errors of the drain-source voltage and drain current are approximately 3%, while the gate-source voltage error is around 8%.
|
|
Received: 22 July 2023
|
|
|
|
|
|
[1] 文阳, 杨媛, 宁红英, 等. SiC MOSFET短路保护技术综述[J]. 电工技术学报, 2022, 37(10): 2538-2548.
Wen Yang, Yang Yuan, Ning Hongying, et al.Review on short-circuit protection technology of SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2022, 37(10): 2538-2548.
[2] 尚海, 梁琳, 王以建, 等. 6.5kV SiC MOSFET模块加权优化设计与实验研究[J]. 电工技术学报, 2022, 37(19): 4911-4922.
Shang Hai, Liang Lin, Wang Yijian, et al.Weighted optimization design and experimental study of 6.5kV SiC MOSFET module[J]. Transactions of China Electrotechnical Society, 2022, 37(19): 4911-4922.
[3] 薄强, 王丽芳, 张玉旺, 等. 应用于无线充电系统的SiC MOSFET关断特性分析[J]. 电力系统自动化, 2021, 45(15): 150-157.
Bo Qiang, Wang Lifang, Zhang Yuwang, et al.Analysis of turn-off characteristics of SiC MOSFET applied to wireless charging system[J]. Automation of Electric Power Systems, 2021, 45(15): 150-157.
[4] 张少昆, 孙微, 范涛, 等. 基于分立器件并联的高功率密度碳化硅电机控制器研究[J]. 电工技术学报, 2023, 38(22): 5999-6014.
Zhang Shaokun, Sun Wei, Fan Tao, et al.Research on high power density silicon carbide motor controller based on parallel connection of discrete devices[J]. Transactions of China Electrotechnical Society, 2023, 38(22): 5999-6014.
[5] 林弘毅, 伍梁, 郭潇, 等. 高功率密度SiC静止无功补偿器强迫风冷散热综合建模及优化设计方法[J]. 电工技术学报, 2021, 36(16): 3446-3456.
Lin Hongyi, Wu Liang, Guo Xiao, et al.A com- prehensive model of forced air cooling and optimal design method of high power density SiC-static var generator[J]. Transactions of China Electrotechnical Society, 2021, 36(16): 3446-3456.
[6] Xie Yue, Chen Cai, Yan Yiyang, et al.Investigation on ultralow turn-off losses phenomenon for SiC MOSFETs with improved switching model[J]. IEEE Transactions on Power Electronics, 2021, 36(8): 9382-9397.
[7] Yang Tongtong, Li Xianbing, Yin Sen, et al.A datasheet-driven nonsegmented empirical SPICE model of SiC MOSFET with improved accuracy and convergence capability[J]. IEEE Transactions on Electron Devices, 2023, 70(1): 4-12.
[8] Jin Miaoxin, Gao Qiang, Wang Yijie, et al.A temperature-dependent SiC MOSFET modeling method based on MATLAB/Simulink[J]. IEEE Access, 2017, 6: 4497-4505.
[9] Wang Jun, Zhao Tiefu, Li Jun, et al.Characterization, modeling, and application of 10-kV SiC MOSFET[J]. IEEE Transactions on Electron Devices, 2008, 55(8): 1798-1806.
[10] 孙凯, 陆珏晶, 吴红飞, 等. 碳化硅MOSFET的变温度参数建模[J]. 中国电机工程学报, 2013, 33(3): 37-43, 17.
Sun Kai, Lu Juejing, Wu Hongfei, et al.Modeling of SiC MOSFET with temperature dependent parame- ters[J]. Proceedings of the CSEE, 2013, 33(3): 37-43, 17.
[11] Arribas A P, Shang Fei, Krishnamurthy M, et al.Simple and accurate circuit simulation model for SiC power MOSFETs[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 449-457.
[12] Wei Yuqi, Mantooth A.Subcircuit based modelling of SiC MOSFET in Matlab/Simulink[C]//2021 IEEE 12th Energy Conversion Congress & Exposition-Asia (ECCE-Asia), Singapore, 2021: 2339-2344.
[13] Yang Xin, Wang Ziru, Ding Yifei, et al.Improved simulation modelling and its verification for SiC MOSFET[J]. IET Power Electronics, 2022, 15(8): 728-737.
[14] Sun Kai, Wu Hongfei, Lu Juejing, et al.Improved modeling of medium voltage SiC MOSFET within wide temperature range[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2229-2237.
[15] Leonardi C, Raciti A, Frisina F, et al.A new PSpice power MOSFET model with temperature dependent parameters: evaluation of performances and com- parison with available models[C]//IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting, New Orleans, LA, USA, 2002: 1174-1181.
[16] 余秋萍, 赵志斌, 孙鹏, 等. 基于分段拟合的SiC MOSFET模型优化方法[J]. 半导体技术, 2021, 46(11): 866-874.
Yu Qiuping, Zhao Zhibin, Sun Peng, et al.SiC MOSFET model optimization method based on piecewise fitting[J]. Semiconductor Technology, 2021, 46(11): 866-874.
[17] Li Hong, Zhao Xingran, Sun Kai, et al.A non- segmented PSpice model of SiC MOSFET with temperature-dependent parameters[J]. IEEE Transa- ctions on Power Electronics, 2019, 34(5): 4603-4612.
[18] 李鑫, 罗毅飞, 史泽南, 等. 一种基于物理的SiC MOSFET改进电路模型[J]. 电工技术学报, 2022, 37(20): 5214-5226.
Li Xin, Luo Yifei, Shi Zenan, et al.An improved physics-based circuit model for SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2022, 37(20): 5214-5226.
[19] Rashid A U, Hossain M M, Emon A I, et al.Datasheet-driven compact model of silicon carbide power MOSFET including third-quadrant behavior[J]. IEEE Transactions on Power Electronics, 2021, 36(10): 11748-11762.
[20] Wang Ning, Zhang Jianzhong, Deng Fujin.Improved SiC MOSFET model considering channel dynamics of transfer characteristics[J]. IEEE Transactions on Power Electronics, 2023, 38(1): 460-471. |
|
|
|
2024, Vol. 39 
