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Other articles related with "TN386":
1900
Liu Jiye, Zheng Zedong, Li Chi, Wang Kui, Li Yongdong
An Indirect Series-Connected SiC MOSFET Power Module with Voltage Self-Balance
Transactions of China Electrotechnical Society 2023 Vol.38 (7): 1900-1909 [
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3016
Cai Yumeng, Zhao Zhibin, Xu Zike, Sun Peng, Li Xuebao
Error Analysis and Regulation Method of Impedance Analyzer in Measuring Split
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218
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341
Zhuang Guiyuan, Zhang Xing, Liu Wei, Zhuang Jiacai
Overvoltage and Overcurrent Protection of SiC MOSFET in Three-Level Topology with Flying Capacitor
Transactions of China Electrotechnical Society 2021 Vol.36 (2): 341-351 [
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308
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528
Yuan Cuiping, Liu Shulin, Zhao Qian, Zhang Shaoxiong, Pei Jinjun
Research of Drive Circuit with Active Discharging Technology for Power PMOS
Transactions of China Electrotechnical Society 2019 Vol.34 (zk2): 528-533 [
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257
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928
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1302
Jin Miaoxin, Gao Qiang, Xu Dianguo
A 200℃ Silicon Carbide MOSFET Gate Driving Circuit Based on Bipolar Junction Transistor
Transactions of China Electrotechnical Society 2018 Vol.33 (6): 1302-1311 [
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387
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1179
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165
Shen Gang,Zhou Luowei,Du Xiong,Yang Xu,Xu Mingwei
Characteristics Analysis of IGBT Module with Bond Wire Lift-off Based on Wavelet Singular Entropy Theory
Transactions of China Electrotechnical Society 2013 Vol.28 (7): 165-171 [
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