电压自平衡碳化硅MOSFET间接串联功率模块

doi:10.19595/j.cnki.1000-6753.tces.211763

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Abstract Nowadays, the blocking voltage of common commercial wide band gap silicon carbide metal oxide field effect transistors (SiC MOSFETs) is less than 1.7kV. In order to improve its equivalent withstanding voltage, an indirect series-connected method based on diode-capacitor hybrid clamping topology is proposed in this paper. And a quasi two-level open-loop modulation method is designed to realize the automatic voltage self-balance. With this indirect series-connected method, a 3.6kV/20A power module was fabricated using SiC MOSFET bare dies. Moreover, a gate driver circuit with overcurrent protection was designed. Along with the gate driver, the whole power module was equivalent to a general-purpose medium-voltage two-level power module with small size and high integration. Finally, the experimental results verified the universality of the power module and also showed its advantages in switching loss and economy.

Key words： SiC MOSFET indirect series-connection voltage self-balance medium-voltage power module

Received: 07 November 2021

PACS:

TN386.1

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	Liu Jiye
	Zheng Zedong
	Li Chi
	Wang Kui
	Li Yongdong

Cite this article:

Liu Jiye,Zheng Zedong,Li Chi等. An Indirect Series-Connected SiC MOSFET Power Module with Voltage Self-Balance[J]. Transactions of China Electrotechnical Society, 2023, 38(7): 1900-1909.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.211763 OR https://dgjsxb.ces-transaction.com/EN/Y2023/V38/I7/1900

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