带飞跨电容的三电平拓扑中SiC MOSFET过电压与过电流保护

doi:10.19595/j.cnki.1000-6753.tces.191638

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Abstract

In order to ensure the reliability of SiC MOSFET application in three-level topology, it is necessary to carry out overvoltage protection and overcurrent protection. According to the overvoltage caused by short circuit, combined with the short circuit protection method, this paper proposes a method of adding a flying capacitor with a large capacitance to the Neutral Point Clamped (NPC) topology. In this way, the SiC MOSFET is not damaged when a short circuit fault occurs and can be quickly turned off to reduce the risk of overcurrent. By setting up a short-circuit test platform, it is verified that when a short-circuit fault occurs in the three-level circuit, the flying capacitor with large capacitance can protect SiC MOSFET from overvoltage, and the short-circuit protection time of SiC MOSFET is less than 2μs.

Key words： Three-level large-capacitance flying capacitor overvoltage protection

Received: 26 November 2019

PACS:	TN386.1
	TM131.1

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	Articles by authors
	Zhuang Guiyuan
	Zhang Xing
	Liu Wei
	Zhuang Jiacai

Cite this article:

Zhuang Guiyuan,Zhang Xing,Liu Wei等. Overvoltage and Overcurrent Protection of SiC MOSFET in Three-Level Topology with Flying Capacitor[J]. Transactions of China Electrotechnical Society, 2021, 36(2): 341-351.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.191638 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I2/341

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