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Characteristics Analysis of IGBT Module with Bond Wire Lift-off Based on Wavelet Singular Entropy Theory |
Shen Gang,Zhou Luowei,Du Xiong,Yang Xu,Xu Mingwei |
Chongqing University Chongqing 400030 China |
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Abstract To deal with the problem that the implementation of recognition and monitoring of bond wire failure inside IGBT module needs complex auxiliary circuit. A new assessment method of bond wire and paralleled IGBT chip failure by use of the real-time switching waveforms of IGBT module is presented in this paper. The work starts from the structural characteristics of IGBT module,and draws the conclusion that both bond wire failure and paralleled IGBT chip failure would change the gate turn-off voltage waveform of IGBT module. The expected data for analyzing and processing are derived through the test of cutting the bond wires of an open sample manually on purpose. Taking into account the data quantity of IGBT module from putting into operation to failure is very large,and it is need to compress the data and excavate the useful information contained in it. Fault feature of gate voltage signal is extracted by use of the wavelet singular entropy theory,and the fault characters of different fault types are compared. The research results provide an important basis for realizing the health assessment of IGBT module.
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Published: 11 December 2013
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