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| Research on Electrothermal Coupling Model of Fully-Immersed Evaporative Cooling IGBT |
| Zhang Yubin1,2, Wen Yingke1, Ruan Lin1,2 |
1. Institute of Electrical Engineering Chinese Academy of Sciences Beijing 100190 China;
2. University of Chinese Academy of Sciences Beijing 100049 China |
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Abstract The development trend of miniaturization and high integration of power electronic devices poses a challenge to the heat dissipation technology. Compared with indirect liquid cooling, insulated gate bipolar transistor (IGBT) using fully-immersed evaporative cooling technology has the advantages of low device temperature rise and uniform temperature distribution. Therefore, its application in IGBT cooling has feasibility and superiority. This paper presents a modeling method for the electrothermal coupling model of IGBT with fully-immersed evaporative cooling technology. Firstly, based on the parameter fitting method, the electrical model of IGBT module is established to calculate the power loss. Secondly, according to the equivalent thermal conductivity, the thermal model of IGBT under the condition of fully-immersed evaporative cooling technology is established, and then under the assumption of linear time invariant system, the reduced order model of IGBT under fully-immersed evaporative cooling technology is obtained. Finally, the simulation and experimental results show that the proposed model can accurately characterize the electrical, thermal and coupling characteristics of IGBT, and has the advantages of simple model parameter extraction method and fast simulation speed.
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Received: 16 June 2021
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2022, Vol. 37 
