负载电流对IGBT器件中键合线的寿命影响和机理分析

doi:10.19595/j.cnki.1000-6753.tces.201056

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Abstract

Through the power cycle experiment of the device, a life model can be established. For example, the CIPS08 formula is often used to predict the life condition under actual working conditions. The maximum junction temperature and junction temperature fluctuation have the greatest impact on life. However, in the power cycling test, different combinations of load current and load pulse duration can achieve the same maximum junction temperature and junction temperature fluctuation. It reflects the strong coupling relationship of these four parameters. In order to further evaluate the contribution of load current and load pulse duration to the lifetime of bonding wire, in this paper, 650V/20A IGBT devices are tested under the combined conditions of the same maximum junction temperature and junction temperature fluctuation but different load current and load pulse duration. Meanwhile, the junction temperature and on-state voltage drop in each cycle are monitored in real time during the test. The results show that the load current has a significant effect on the lifetime of the IGBT device. Larger current will reduce the life of IGBT devices obviously. Furthermore, an electric-mechanical-thermal multi-physics finite element model of the TO package IGBT device is established, considering the elastic-plastic characteristics of the aluminum bonding wire and the surface metal layer. The mechanism of the current effect on the stress of the bonding wire is analyzed, and the fatigue model is introduced. Simulation results are consistent with the test results. This paper can provide guidance for the accurate modeling and the lifetime prediction of bonding wire in IGBT devices.

Key words： TO packaged IGBT power cycling test load current accurate finite element model lifetime prediction

Received: 19 August 2020

PACS:

TN322.8

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	Zhao Zixuan
	Chen Jie
	Deng Erping
	Li Anqi
	Huang Yongzhang

Cite this article:

Zhao Zixuan,Chen Jie,Deng Erping等. The Influence and Failure Mechanism Analysis of the Load Current on the IGBT Lifetime with Bond Wire Failure[J]. Transactions of China Electrotechnical Society, 2022, 37(1): 244-253.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.201056 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I1/244

[1] Choi U, Blaabjerg F, Munk-Nielsen S, et al. Con- dition monitoring of IGBT module for reliability improvement of power converters[J]. 2016 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific), Busan, 2016: 602-607.
[2] Blaabjerg F, Chen Zhe, Kjaer S B.Power electronics as efficient interface in dispersed power generation systems[J]. IEEE Transactions on Power Electronics, 2004, 19(5): 1184-1194.
[3] GopiReddy L R, Tolbert L M, Ozpineci B.Power cycle testing of power switches: a literature survey[J]. IEEE Transactions on Power Electronics, 2015, 30(5): 2465-2473.
[4] 曾正, 欧开鸿, 吴义伯, 等. 车用双面散热功率模块的热-力协同设计[J]. 电工技术学报, 2020, 35(14): 3050-3064.
Zeng Zheng, Ou Kaihong, Wu Yibo, et al. Thermo- mechanical co-design of double sided cooling power module for electric vehicle application[J]. Transa- ctions of China Electrotechnical Society, 2020, 35(14): 3050-3064.
[5] 吴理豪, 张波.电动汽车静态无线充电技术研究综述(下篇)[J]. 电工技术学报, 2020, 35(8): 1662-1678.
Wu Lihao, Zhang Bo.Overview of static wireless charging technology for electric vehicles: Part 2[J]. Transactions of China Electrotechnical Society, 2020, 35(8): 1662-1678.
[6] Smet V, Francois Forest, Jean-Jacques Huselstein, et al. Ageing and failure models of IGBT modules in high-temperature power cycling[J]. IEEE Transa- ctions on Industrial Electronics, 2011, 58(10): 4931-4941.
[7] Held M, Jacob P, Nicoletti G, et al. Fast power cycling test of IGBT modules in traction app- lication[J]. Proceedings of Second International Conference on Power Electronics and Drive Systems, Singapore, 1997, 1: 425-430.
[8] Fuji Electric: Chapter 11 reliability of power module[EB/OL]. www.fujielectric.Chapter 11 reliability of power module[EB/OL]. www.fujielectric.com, 2015.
[9] 邓二平, 陈杰, 赵雨山, 等. 90kW/3000A高压大功率IGBT器件功率循环测试装备研制[J]. 半导体技术, 2019, 44(3): 223-231.
Deng Erping, Chen Jie, Zhao Yushan, et al. Deve- lopment of 90kW/3000A power cycling equipment for high power and high voltage IGBT modules[J]. Semiconductor Technology, 2019, 44(3): 223-231.
[10] 邓二平, 张经纬, 李尧圣, 等. 焊接式IGBT模块与压接型IGBT器件可靠性差异分析[J]. 半导体技术, 2016, 41(11): 801-810, 815.
Deng Erping, Zhang Jingwei, Li Yaosheng, et al. Reliability difference analysis of wire-bond IGBT module and press-pack IGBT device[J]. Semicon- ductor Technology, 2016, 41(11): 801-810, 815.
[11] Wu Wuchen, Held M, Jacob P, et al. Investigation on the long term reliability of power IGBT modules[C]//Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95, Yokohama, Japan, 1995: 443-448.
[12] Hu Borong, Ortiz Gonzalez J, Li Ran, et al. Failure and reliability analysis of a SiC power module based on stress comparison to a Si device[J]. IEEE Transa- ctions on Device and Materials Reliability, 2017, 17(4): 727-737.
[13] Shabany Y.传热学: 电力电子器件热管理[M]. 北京: 机械工业出版社, 2013.
[14] 赖伟, 陈民铀, 冉立, 等. 老化试验条件下的IGBT失效机理分析[J]. 中国电机工程学报, 2015, 35(20): 5293-5300.
Lai Wei, Chen Minyou, Ran Li, et al. Analysis of IGBT failure mechanism based on ageing experi- ments[J]. Proceedings of the CSEE, 2015, 35(20): 5293-5300.
[15] Chen Jie, Deng Erping, Xie Luhong, et al. Investig- ations on averaging mechanisms of virtual junction temperature determined by VCE (T) method for IGBTs[J]. IEEE Transactions on Electronic Devices, 2020, 67(3): 1106-1112.
[16] 贾英杰, 罗毅飞, 肖飞, 等. 一种符合欧姆定律的IGBT等效电阻模型[J]. 电工技术学报, 2020, 35(2): 310-317.
Jia Yingjie, Luo Yifei, Xiao Fei, et al. An equivalent electrical resistance model of IGBT suitable for Ohm’s law[J]. Transactions of China Electrotechnical Society, 2020, 35(2): 310-317.
[17] Chidambaram N V.A numerical and experimental study of temperature cycle wire bond failure[C]//Proceedings 41st Electronic Components & Tech- nology Conference, Atlanta, GA, USA, 1991: 877-882.
[18] Zahra S Hosseini, Mohsen Dadfarnia, Brian P Somerday, et al. On the theoretical modeling of fatigue crack growth[J]. Journal of the Mechanics and Physics of Solids, 2018, 121: 341-362.
[19] 张朝晖.ANSYS 12.0结构分析工程应用实例解析[M]. 3版.北京: 机械工业出版社, 2010.
[20] 廖俊, 张毅刚.焊接空心球节点荷载-位移曲线双线性模型研究[J]. 空间结构, 2010, 16(2): 31-38.
Liao Jun, Zhang Yigang.Study on bilinear model of load displacement curve of welded hollow spherical joints[J]. Spatial Structure, 2010, 16(2): 31-38.
[21] 王学梅, 张波, 吴海平.基于失效物理的功率器件疲劳失效机理[J]. 电工技术学报, 2019, 34(4): 717-727.
Wang Xuemei, Zhang Bo, Wu Haiping.A review of failure mechanism of power devices based on physics- of-failure[J]. Transactions of China Electrotechnical Society, 2019, 34(4): 717-727.
[22] Coffin, Jr L F.A study of the effects of cyclic thermal stresses on a ductile metal[J]. Ryūmachi.[Rheumatism], 1953, 22(6): 419-606.
[23] Manson S S.Behavior of materials under conditions of thermal stress[J]. Technical Report Archive & Image Library, 1953, 7(s3-4): 661-665.
[24] Bathias C, Pineau A.Fatigue of materials and structures: fundamentals[M]. London: ISTE Ltd, 2010.
[25] 张经纬, 邓二平, 赵志斌, 等. 压接型IGBT器件单芯片子模组疲劳失效的仿真[J]. 电工技术学报, 2018, 33(18): 4277-4285.
Zhang Jingwei, Deng Erping, Zhao Zhibin, et al. Simulation study on fatigue failure of single IGBT chip module of press-pack IGBTs[J]. Transactions of China Electrotechnical Society, 2018, 33(18): 4277-4285.