基于场路耦合的大功率IGBT多速率电热联合仿真方法

doi:10.19595/j.cnki.1000-6753.tces.190350

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Abstract The self-heating of IGBT module is obvious in some non-periodic overload extreme conditions, such as short-circuit. Due to the impact of external loads such as high voltage and high current, the temperature of IGBT module will rise rapidly in a short time, which will affect the semiconductor characteristics of IGBT chips and the material characteristics of the packaging structure. The final manifestation is the change of electrical behaviors of IGBT module power terminals. In this case, it is necessary to pay attention to the electrical and temperature distribution characteristics of IGBT module at the same time. However, the difference in time scale between electrical and thermal problems brings inconvenience to the electro-thermal coupling simulation. Therefore, an electro- thermal co-simulation method based on field-circuit coupling is proposed in this paper. Firstly, the co-simulation principle is analyzed. Then, a circuit model based on IGBT physical model and a FEM-based thermal model are constructed in Simulink and COMSOL respectively, and the co-simulation under the multi-rate simulation strategy is realized through a control file of Matlab script. Finally, the proposed method is verified by switch transient test and short-circuit test on an ABB 3.3kV/1 500A high power IGBT module.

Key words： Insulated gate bipolar transistor (IGBT) self-heating extreme condition field-circuit coupling co-simulation

Received: 01 April 2019 Published: 12 May 2020

PACS:

TN322

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	Jia Yingjie
	Xiao Fei
	Luo Yifei
	Liu Binli
	Huang Yongle

Cite this article:

Jia Yingjie,Xiao Fei,Luo Yifei等. Multi-Rate Electro-Thermal Simulation Method for High Power IGBT Based on Field-Circuit Coupling[J]. Transactions of China Electrotechnical Society, 2020, 35(9): 1952-1961.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.190350 OR https://dgjsxb.ces-transaction.com/EN/Y2020/V35/I9/1952

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