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| An Improved Physics-Based Circuit Model for SiC MOSFET |
| Li Xin1, Luo Yifei1, Shi Zenan2, Wang Ruitian1, Xiao Fei1 |
1. National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 China;
2. College of Electrical Engineering Xi’an Jiaotong University Xi’an 710049 China |
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Abstract SiC MOSFET has advantages of high frequency, high voltage and high temperature due to its material advantages in bandgap width, breakdown electric field and electron saturation speed. However, the special material, structure and high-switching speed of SiC MOSFET make the internal physical mechanism of the device more complicated during the switching transient. The traditional SiC MOSFET model adopted the modeling methods of some Si devices, and it is difficult to accurately evaluate the dynamic and static characteristics of the device. Therefore, an improved physics-based SiC MOSFET circuit model is proposed in this paper. Firstly, the shortcomings of the traditional SiC MOSFET model are analyzed and improved based on the operation principles of the device. The mode of current diffusion is an important factor affecting the static characteristics of the SiC MOSFET. The current diffusion in the N- region are trapezoid due to the narrow N- drift region. Hence, the drift region resistance model is improved. The transient model of the SiC MOSFET describes the high-frequency application characteristics of the device. Then junction capacitance models of the SiC MOSFET are improved based on the abrupt junction, punch-through condition and negative-voltage turn-off characteristics. Finally, experiments are carried out on a CREE SiC MOSFET (1 200V/325A). Simulation and experiment are in a good agreement, which verifies the effectiveness and accuracy of the improved model.
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Received: 21 March 2021
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2022, Vol. 37 
