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| An Equivalent Electrical Resistance Model of IGBT Suitable for Ohm’s Law |
| Jia Yingjie, Luo Yifei, Xiao Fei, Liu Binli, Huang Yongle |
| National key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 China |
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Abstract The calculation of electric current field is generally realized by solving the current conservation equation in finite element simulation. The calculation method conforms to Ohm's law, that is, the current is proportional to the voltage. However, the electrical characteristics of IGBT are essentially different from linear conductors, and the conductivity of the chip is not equal to the conductivity of the chip material, so it cannot be directly applied to finite element simulation. Therefore, firstly, this paper performs piecewise linearization of the V-I characteristics curve of IGBT by least square method, and constructed an equivalent resistance model of IGBT suitable for Ohm's law by function transformation. Then, the equivalent resistance of IGBT chip was transformed into equivalent conductivity, and the electrothermal coupling model of IGBT chip based on finite element method was constructed. Finally, the model was verified by a short time varying current experiment under single pulse. Experimental results show that the proposed modeling method satisfies the basic algorithm of Ohm’s law, and can accurately describe the electro-thermal characteristics of IGBT under continuous current changing conditions.
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Received: 29 November 2018
Published: 17 January 2020
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2020, Vol. 35 
