基于集电极漏电流的IGBT健康状态监测方法研究

doi:10.19595/j.cnki.1000-6753.tces.160013

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Abstract A health condition monitoring method adopting IGBT collector leakage current is put forward to monitor the performance degradation of IGBT chip. Generation mechanism, operation rule and performance degradation mechanism of collector leakage current were analyzed in detail, based on semiconductor physics, essential structure of IGBT and device reliability physics. The variations of collector leakage current with the performance degradation grade and time were also studied. After that, combined theoretical analysis with analytical description, the health condition monitoring method of collector leakage current against the performance degradation of IGBT chip was established. The results of simulations and experiments verify the proposed method. It is important in theory and practical application for performance degradation monitoring of IGBT chip.

Key words： Performance degradation of IGBT chip threshold voltage collector leakage current health condition monitoring method

Received: 06 January 2016 Published: 30 August 2017

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TN322

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	Liu Binli
	Xiao Fei
	Luo Yifei
	Wang Bo
	Xiong Youxing

Cite this article:

Liu Binli,Xiao Fei,Luo Yifei等. Investigation into the Health Condition Monitoring Method of IGBT Based on Collector Leakage Current[J]. Transactions of China Electrotechnical Society, 2017, 32(16): 183-193.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.160013 OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I16/183

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