Abstract A health condition monitoring method adopting IGBT collector leakage current is put forward to monitor the performance degradation of IGBT chip. Generation mechanism, operation rule and performance degradation mechanism of collector leakage current were analyzed in detail, based on semiconductor physics, essential structure of IGBT and device reliability physics. The variations of collector leakage current with the performance degradation grade and time were also studied. After that, combined theoretical analysis with analytical description, the health condition monitoring method of collector leakage current against the performance degradation of IGBT chip was established. The results of simulations and experiments verify the proposed method. It is important in theory and practical application for performance degradation monitoring of IGBT chip.
Liu Binli,Xiao Fei,Luo Yifei等. Investigation into the Health Condition Monitoring Method of IGBT Based on Collector Leakage Current[J]. Transactions of China Electrotechnical Society, 2017, 32(16): 183-193.
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