Transactions of China Electrotechnical Society  2022, Vol. 37 Issue (19): 4911-4922    DOI: 10.19595/j.cnki.1000-6753.tces.212033
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Weighted Optimization Design and Experimental Study of 6.5kV SiC MOSFET Module
Shang Hai, Liang Lin, Wang Yijian, Yang Yingjie
State Key Laboratory of Advanced Electromagnetic Engineering and Technology School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China

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Abstract  Aiming at the key problems of high voltage SiC module packaging (i.e. insulation performance, parasitic parameters, thermal management), a multi-objective weighted optimization method was proposed in this paper to achieve the trade-off and optimization of multiple performance indexes of 6.5kV SiC MOSFET module. First, the parasitic capacitance, thermal stress of the solder layer and electric field strength were modeled respectively by establishing multi-physics finite element models. The three indexes were weighted and optimized to obtain the optimal dimensional parameters to ensure the overall performance of the 6.5kV SiC MOSFET module. Through the design of the housing and terminals, the parasitic inductance was reduced as much as possible while keeping the external insulation of the module reliable. The parasitic inductance and insulation performance of the module were compromised. Finally, the performance advantages of the developed module and the effectiveness of the multi-objective weighted optimization method were verified through the double pulse test and high potential test. The results show that the developed module can work reliably under the condition of 4 500V/14A. The superiority of the overall performance of the module is guaranteed, while the parasitic parameters and the insulation performance are optimized.
Key wordsHigh voltage SiC MOSFET      packaging      multi-physics field      multi-objective weighted optimization     
Received: 14 December 2021     
PACS: TN305.94  
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Shang Hai
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Yang Yingjie
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Shang Hai,Liang Lin,Wang Yijian等. Weighted Optimization Design and Experimental Study of 6.5kV SiC MOSFET Module[J]. Transactions of China Electrotechnical Society, 2022, 37(19): 4911-4922.
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