6.5kV SiC MOSFET 模块加权优化设计与实验研究

doi:10.19595/j.cnki.1000-6753.tces.212033

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Abstract Aiming at the key problems of high voltage SiC module packaging (i.e. insulation performance, parasitic parameters, thermal management), a multi-objective weighted optimization method was proposed in this paper to achieve the trade-off and optimization of multiple performance indexes of 6.5kV SiC MOSFET module. First, the parasitic capacitance, thermal stress of the solder layer and electric field strength were modeled respectively by establishing multi-physics finite element models. The three indexes were weighted and optimized to obtain the optimal dimensional parameters to ensure the overall performance of the 6.5kV SiC MOSFET module. Through the design of the housing and terminals, the parasitic inductance was reduced as much as possible while keeping the external insulation of the module reliable. The parasitic inductance and insulation performance of the module were compromised. Finally, the performance advantages of the developed module and the effectiveness of the multi-objective weighted optimization method were verified through the double pulse test and high potential test. The results show that the developed module can work reliably under the condition of 4 500V/14A. The superiority of the overall performance of the module is guaranteed, while the parasitic parameters and the insulation performance are optimized.

Key words： High voltage SiC MOSFET packaging multi-physics field multi-objective weighted optimization

Received: 14 December 2021

PACS:

TN305.94

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	Shang Hai
	Liang Lin
	Wang Yijian
	Yang Yingjie

Cite this article:

Shang Hai,Liang Lin,Wang Yijian等. Weighted Optimization Design and Experimental Study of 6.5kV SiC MOSFET Module[J]. Transactions of China Electrotechnical Society, 2022, 37(19): 4911-4922.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.212033 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I19/4911

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