Abstract：With the increase of the switching frequency of SiC MOSFETs, the crosstalk of inverter bridge arm becomes more and more serious, and it is easy to cause the bridge arm through short circuit, which limits the further increase of the switching frequency of SiC MOSFETs. In this paper, a resonant auxiliary driving circuit for SiC MOSFET crosstalk suppressionis proposed. By adding a capacitor inductor auxiliary resonant circuit between the gate and the source, the negative voltage can be changed to zero voltage during the turn-off period of SiC MOSFETs without any active devices. When the SiC MOSFET is turned on, the auxiliary circuit makes the gate voltage rise from 0.7V instead of a negative voltage. Compared with the traditional driving circuit, the switching speed is faster and the switching loss is lower, and alsohas the advantages of forward and reverse crosstalk suppression. This paper analyzes the parameter setting of the circuit, and verifies the advantages of the circuit through simulation and experiment.
黄勇胜, 张建忠, 王宁. 一种SiC MOSFET串扰抑制的谐振辅助驱动电路[J]. 电工技术学报, 2022, 37(12): 3004-3015.
Huang Yongsheng, Zhang Jianzhong, Wang Ning. A Resonant Auxiliary Drive Circuit for SiC MOSFET to Suppress Crosstalk. Transactions of China Electrotechnical Society, 2022, 37(12): 3004-3015.
[1] Josifović I, Popović-Gerber J, Ferreira J A.Improving SiC JFET switching behavior under influence of circuit parasitics[J]. IEEE Transactions on Power Electronics, 2012, 27(8): 3843-3854. [2] 吴海富, 张建忠, 赵进, 等. SiC MOSFET短路检测与保护研究综述[J]. 电工技术学报, 2019, 34(21): 4519-4528. Wu Haifu, Zhang Jianzhong, Zhao Jin, et al.Summary of research on short circuit detection and protection of SiC MOSFET[J]. Transactions of China Electro-technical Society, 2019, 34(21): 4519-4528. [3] 王莉娜, 马浩博, 袁恺, 等. SiC MOSFET半桥电路开关瞬态过电流、过电压建模与影响因素分析[J]. 电工技术学报, 2020, 35(17): 3652-3665. Wang Lina, Ma Haobo, Yuan Kai, et al.Switching transient overcurrent and overvoltage modeling and influencing factors analysis of SiC MOSFET half-bridge circuit[J]. Transactions of China Electro-technical Society, 2020, 35(17): 3652-3665. [4] 何杰, 刘钰山, 毕大强, 等. 电压探头对宽禁带器件高频暂态电压精确测量的影响[J]. 电工技术学报, 2021, 36(2): 362-372. He Jie, Liu Yushan, Bi Daqiang, et al.The influence of voltage probe on the accurate measurement of high frequency transient voltage of wide bandgap devices[J]. Transactions of China Electrotechnical Society, 2021, 36(2): 362-372. [5] Zhao Jun, Wu Liang, Li Zhenyu, et al.Analysis and suppression for crosstalk in SiC MOSFET turn-off transient[C]//2020 IEEE 9th International Power Electronics and Motion Control Conference, Asia, 2020: 1145-1150. [6] Li Hong, Jiang Yanfeng, Qiu Zhidong, et al.A predictive algorithm for crosstalk peaks of SiC MOSFET by considering the nonlinearity of gate-drain capacitance[J]. IEEE Transactions on Power Electronics, 2021, 36(3): 2823-2834. [7] Zhang Zheyu, Zhang Weimin, Wang F, et al.Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration[C]//2012 IEEE Energy Conversion Congress and Exposition (ECCE), Raleigh, 2012: 3950-3955. [8] 刘帆, 朱德文, 吴钫, 等. SiC MOSFET建模及驱动电路设计[J]. 电力电子技术, 2018, 52(12): 133-136. Liu Fan, Zhu Dewen, Wu Fang, et al.Modeling and driving circuit design of SiC MOSFET[J]. Power Electronics Technology, 2018, 52(12): 133-136. [9] 秦海鸿, 朱梓悦, 王丹, 等. 一种适用于SiC基变换器的桥臂串扰抑制方法[J]. 南京航空航天大学学报, 2017, 49(6): 872-882. Qin Haihong, Zhu Ziyue, Wang Dan, et al.A method of crosstalk suppression for SiC based converters[J]. Journal of Nanjing University of Aeronautics and Astronautics, 2017, 49(6): 872-882. [10] Lu Zhebie, Li Chengmin, Wu Han, et al.Design of active SiC MOSFET gate driver for crosstalk supper-ssion considering impedance coordination between gate loop and power loop[C]//2019 IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, 2019: 986-990. [11] Wang Panbao, Zhang Linzhi, Lu Xiaonan, et al.An improved active crosstalk suppression method for high-speed SiC MOSFETs[J]. IEEE Transactions on Industry Applications, 2019, 55(6): 7736-7744. [12] 李辉, 黄樟坚, 廖兴林, 等. 一种抑制SiC MOSFET桥臂串扰的改进门极驱动设计[J]. 电工技术学报, 2019, 34(2): 275-285. Li Hui, Huang Zhangjian, Liao Xinglin, et al.An improved gate drive design to suppress crosstalk of SiC MOSFET bridge arms[J]. Transactions of China Electrotechnical Society, 2019, 34(2): 275-285. [13] Zhang Boyi, Wan Shuo.A crosstalk suppression technique for SiC MOSFETs in the bridge-leg con-figuration[C]//2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, 2020: 1513-1520 [14] Zhang Binfeng, Xie Shaojun, Xu Jinming, et al.A magnetic coupling based gate driver for crosstalk suppression of SiC MOSFETs[J]. IEEE Transactions on Industrial Electronics, 2019, 64(11): 9052-9063. [15] Zhang Zheyu, Dix J, Wang F F, et al.Intelligent gate drive for fast switching and crosstalk suppression of SiC devices[J]. IEEE Transactions on Power Elec-tronics, 2017, 32(12): 9319-9332. [16] Li Chengmin, Lu Zhebie, Chen Ying, et al.High off-state impedance gate driver of SiC MOSFETs for crosstalk voltage elimination considering common-source inductance[J]. IEEE Transactions on Power Electronics, 2020, 35(3): 2999-3011. [17] Liu Chunhui, Zhang Zhengda, Liu Yifu, et al.Smart self-driving multilevel gate driver for fast switching and crosstalk suppression of SiC MOSFETs[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 442-453. [18] 张建忠, 吴海富, 张雅倩, 等. 一种SiC MOSFET谐振门极驱动电路[J]. 电工技术学报, 2020, 35(16): 3453-3459. Zhang Jianzhong, Wu Haifu, Zhang Yaqian, et al.A kind of SiC MOSFET resonant gate driver circuit[J]. Transactions of China Electrotechnical Society, 2020, 35(16): 3453-3459. [19] Wang Jianjing, Chung H S.A novel RCD level shifter for elimination of spurious turn-on in the bridge-leg configuration[J]. IEEE Transactions on Power Elec-tronics, 2015, 30(2): 976-984.
2022, Vol. 37 
