Abstract：The accurate measurement of the split C-V characteristics (CGS-VG and CGD-VG) of power MOSFET devices is very important for device modeling and gate oxide reliability evaluation. Impedance analyzer is the key equipment to measure the CGS-VG and CGD-VG. When using the impedance analyzer to measure a parameter of a three-terminal device, it is necessary to shield the non-measured third terminal to eliminate the introduced parallel impedance error. However, the power MOSFET device turns on when the gate voltage exceeds the threshold voltage, which affects the measurement circuit topology and introduces other measurement errors. In this paper, a detailed error analysis of the CGS-VG and CGD-VG measured by the impedance analyzer was carried out, and the reason of measurement error was revealed. The equivalent circuit model of the measurement was established, and the analytical expression of the measurement error was given. The error analysis was quantified and the effectiveness of the equivalent circuit model was verified by combining experiment and numerical analysis. Finally, three control methods that can achieve accurate measurement of C-V characteristics were proposed and verified by experiments. The results show that the measurement error occurs after the device turns on. The drain and source of the device transition from capacitance to low resistance. The parasitic inductance of the guarding (L5) is shunted from the equivalent input impedance of the automatic balance bridge (L3), which introduces errors. An accurate measurement under different frequencies can be achieved when L3 and L5satisfya certain matching relationship.
蔡雨萌, 赵志斌, 徐子珂, 孙鹏, 李学宝. 阻抗分析仪测量功率MOSFET器件栅极分离电容C-V特性的误差分析及调控方法[J]. 电工技术学报, 2022, 37(12): 3016-3027.
Cai Yumeng, Zhao Zhibin, Xu Zike, Sun Peng, Li Xuebao. Error Analysis and Regulation Method of Impedance Analyzer in Measuring Split C-V Characteristics of Power MOSFET Device. Transactions of China Electrotechnical Society, 2022, 37(12): 3016-3027.
[1] 盛况, 任娜, 徐弘毅. 碳化硅功率器件技术综述与展望[J]. 中国电机工程学报, 2020, 40(6): 1741-1753. Sheng Kuang, Ren Na, Xu Hongyi.A recent review on silicon carbide power devices technologies[J]. Proceedings of the CSEE, 2020, 40(6): 1741-1753. [2] 高晖胜, 訾鹏, 黄林彬, 等. 能量约束下电力电子并网装备的最优频率控制[J]. 电力系统自动化, 2020, 44(17): 9-18. Gao Huisheng, Zi Peng, Huang Linbin, et al.Optimal frequency control of grid-connected power electronic devices with energy constraints[J]. Automation of Electric Power Systems, 2020, 44(17): 9-18. [3] 顼佳宇, 李学宝, 崔翔, 等. 高压大功率IGBT器件封装用有机硅凝胶的制备工艺及耐电性[J]. 电工技术学报, 2021, 36(2): 352-361. Xu Jiayu, Li Xuebao, Cui Xiang, et al.Preparation process and breakdown properties of silicone gel used for the encapsulation of IGBT power modules[J]. Transactions of China Electrotechnical Society, 2021, 36(2): 352-361. [4] 周林, 李寒江, 解宝, 等. SiC MOSFET的Saber建模及其在光伏并网逆变器中的应用和分析[J]. 电工技术学报, 2019, 34(20): 4251-4263. Zhou Lin, Li Hanjiang, Xie Bao, et al.Saber modeling of SiC MOSFET and its application and analysis in photovoltaic grid-connected inverter[J]. Transactions of China Electrotechnical Society, 2019, 34(20): 4251-4263. [5] 陈杰, 邓二平, 赵子轩, 等. 不同老化试验方法下SiC MOSFET失效机理分析[J]. 电工技术学报, 2020, 35(24): 5105-5114. Chen Jie, Deng Erping, Zhao Zixuan, et al.Failure mechanism analysis of SiC MOSFET under different aging test methods[J]. Transactions of China Electro-technical Society, 2020, 35(24): 5105-5114. [6] 王莉娜, 马浩博, 袁恺, 等. SiC MOSFET半桥电路开关瞬态过电流、过电压建模与影响因素分析[J]. 电工技术学报, 2020, 35(17): 3652-3665. Wang Lina, Ma Haobo, Yuan Kai, et al.Modeling and influencing factor analysis of SiC MOSFET half-bridge circuit switching transient overcurrent and overvoltage[J]. Transactions of China Electro-technical Society, 2020, 35(17): 3652-3665. [7] 张建忠, 吴海富, 张雅倩, 等. 一种SiC MOSFET谐振门极驱动电路[J]. 电工技术学报, 2020, 35(16): 3453-3459. Zhang Jianzhong, Wu Haifu, Zhang Yaqian, et al.A resonant gate driver for SiC MOSFET[J]. Transa-ctions of China Electrotechnical Society, 2020, 35(16): 3453-3459. [8] Funaki T, Phankong N, Kimoto T, et al.Measuring terminal capacitance and its voltage dependency for high-voltage power devices[J]. IEEE Transactions on Power Electronics, 2009, 24(6): 1486-1493. [9] Habas P, Mileusnic S, Zivanov T.Characterization of power VDMOSFETs by split C-V measurements[C]//International Conference on Microelectronics, Nis, Yugoslavia, 2000: 339-342. [10] Scott R S, Franz G A, Johnson J L.An accurate model for power DMOSFETs including interelectrode capacitances[J]. IEEE Transactions on Power Elec-tronics, 1991, 6(2): 192-198. [11] Elferich R, Lopez T, Koper N.Accurate behavioural modelling of power MOSFETs based on device measurements and FE-simulations[C]//European Con-ference on Power Electronics and Applications, Dresden, Germany, 2005: 9. [12] RaËl S, Davat B.A physics-based modeling of interelectrode MOS capacitances of power MOSFET and IGBT[J]. IEEE Transactions on Power Elec-tronics, 2008, 23(5): 2585-2594. [13] Lin W W, Chan P C.On the measurement of parasitic capacitances of device with more than two external terminals using an LCR meter[J]. IEEE Transactions on Electron Devices, 1991, 38(11): 2573-2575. [14] Okawa Y, Norimatsu H, Suto H, et al.The negative capacitance effect on the C-V measurement of ultra thin gate dielectrics induced by the stray capacitance of the measurement system[C]//International Con-ference on Microelectronic Test Structures, Monterey, CA, USA, 2003: 197-202. [15] JESD6 Measurement of small values of transistor capacitance[S]. VA, USA, 1967. [16] IEC 60747 Semiconductor devices[S]. Geneva, Switzerland, 2006. [17] Mileusnic S, Zivanov M, Habas P.MOS transistors characterization by split C-V method[C]//Inter-national Semiconductor Conference, Sinaia, Romania, 2001: 503-506. [18] Moultif N, Joubert E, Masmoudi M, et al. Charac-terization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures[J]. Micro-electronics Reliability, 2017, 76/77: 243-248. [19] Mukunoki Y, Nakamura Y, Konno K, et al.Modeling of a silicon-carbide MOSFET with focus on internal stray capacitances and inductances, and its veri-fication[J]. IEEE Transactions on Industry Appli-cations, 2018, 54(3): 2588-2597. [20] Keysight Technologies. Impedance analyzer handbook 6th[EB/OL]. https://www.keysight.com/ca/en/assets/7018-06840/application-notes/5950-3000.pdf?success=true. [21] Hu Chenming.Modern semiconductor devices for integrated circuits[M]. Upper Saddle River, NJ: Prentice Hall, 2011.
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