Steady Temperature Equalization Method for the Parallel IGBTs Considering the Thermal Resistance and the Matching Emitter Parasitic Inductance
Fan Jiayu1, Zheng Feilin1, Wang Yaohua2, Li Xuebao1, Cui Xiang1
1. State Key Laboratory of Alternate Electrical Power System With Renewable energy Sources North China Electric Power University Beijing 102206 China; 2. State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute Co. Ltd Beijing 102209 China
Abstract：In the IGBT device with the parallel chips, the thermal resistance and emitter parasitic inductance are the key parameters which determine the steady junction temperature distribution. Therefore, to equalize the steady junction temperature of the parallel chips, it is vital to design the thermal resistance and emitter parasitic inductance reasonably. In this paper, an electrothermal model with two parallel IGBT chips is established to investigate the impacts of the junction temperature and the emitter parasitic inductance on the dynamic losses. Then, the effects of thermal resistance and emitter parasitic inductance on the temperature distribution are further studied by the electrothermal coupling simulation. On this basis, the steady temperature equalization method for the parallel IGBT chips is put forward. The proposed method can obtain the reference values of the thermal resistance or emitter parasitic inductance by solving the equation set rather than the complicated electrothermal calculation. Finally, taking two parallel IGBT chips as an example, the steady junction temperature of the parallel chips at different frequencies is demonstrated, which shows the effectiveness of the method.
范迦羽, 郑飞麟, 王耀华, 李学宝, 崔翔. 计及热阻与发射极电感匹配的并联IGBT芯片稳态结温均衡方法[J]. 电工技术学报, 2022, 37(12): 3028-3037.
Fan Jiayu, Zheng Feilin, Wang Yaohua, Li Xuebao, Cui Xiang. Steady Temperature Equalization Method for the Parallel IGBTs Considering the Thermal Resistance and the Matching Emitter Parasitic Inductance. Transactions of China Electrotechnical Society, 2022, 37(12): 3028-3037.
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