Abstract：In high power systems, the switching devices are usually utilized in parallel in order to scale up the power rate of circuits. A transient electro-thermal model of paralleled modules needs to be established to keep insulated gate bipolar transistor (IGBT) modules operating in the safe area. Firstly, the influence on losses by junction temperature is analyzed in detail. The variations of voltage and current are derived by building equivalent circuits in different switching periods. Meanwhile, the quantitative relationship between temperature-sensitive parameters and junction temperature is determined by building test platform. Furthermore, considering the coupling thermal path between paralleled modules, an improved thermal model for paralleled modules is proposed and analyzed. Finally, an electro-thermal model is built based on loss analysis and thermal model. The experimental platform was built to analyze the influence of distance between the modules on the transient junction temperature in paralleled modules. Compared with traditional models, the calculation results agree well with the experimental results, which validates the proposed model.
唐云宇, 林燎源, 马皓. 一种改进的并联IGBT模块瞬态电热模型[J]. 电工技术学报, 2017, 32(12): 88-96.
Tang Yunyu, Lin Liaoyuan, Ma Hao. An Improved Transient Electro-Thermal Model for Paralleled IGBT Modules. Transactions of China Electrotechnical Society, 2017, 32(12): 88-96.
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