Abstract：Material characteristics of semiconductor depend on temperature, thus performance and switching transient of silicon IGBT is greatly affected by temperature. Through the experiments of switching transient under different temperature, it is found that IGBT’s turn-on and turn-off transients have different temperature characteristics. According to the analysis of the experimental phenomenon, a conclusion is obtained that the temperature characteristic of switching transient is mainly affected by carrier life. Thereby, based on the existing methods, an improved eletro-thermal model of IGBT is proposed. Then the model is used to simulate the turn-off tail current and the whole switching transient of IGBT. With the comparison between simulation and experiment waveforms, the above conclusion is validated and the model is also approved to be accurate.
唐勇, 汪波, 陈明. IGBT开关瞬态的温度特性与电热仿真模型[J]. 电工技术学报, 2012, 27(12): 146-153.
Tang Yong, Wang Bo, Chen Ming. Temperature Characteristioc and Electric-Thermal Model of IGBT Switching Transient. Transactions of China Electrotechnical Society, 2012, 27(12): 146-153.
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