Mechanism and Characteristics of Plasma Extraction Transit Time Oscillationof Paralleled IGBT Chips
Tang Xinling1, Cui Xiang1, Zhao Zhibin1, Zhang Peng2, Li Jinyuan2
1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China; 2. Global Energy Interconnection Research Institute Beijing 102209 China;
Abstract：High power IGBT usually contains several IGBT chips to obtain a high current handling capability. Plasma extraction transit time (PETT) oscillation exists in the tail phase during the turn-off process of paralleled IGBT chips, which causes serious electromagnetic interference to the environment and drive circuit. At first, the small signal characteristic of space charge region caused by injection of carriers is analyzed in this paper. Then, the relationship between package parasitic inductance and oscillating voltage range is investigated, the oscillation voltage range and frequency are deduced based on theoretical analysis. At last, an IGBT dynamic test platform is built, and the PETT oscillation characteristics of two paralleling IGBT chips are studied. Experimental results indicate that PETT oscillation is not randomly generated, which has certain relevance with collector current value.In addition, the experimental results are in agreement with the calculated results for oscillation voltage range and oscillation frequency. Therefore, the correctness of the analysis of PETT oscillation characteristics is verified.
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2018, Vol. 33 
