电工技术学报  2018, Vol. 33 Issue (10): 2354-2364    DOI: 10.19595/j.cnki.1000-6753.tces.161915
电力电子与电力传动 |
并联IGBT芯片的等离子体抽取渡越时间振荡机理及其特性分析
唐新灵1, 崔翔1, 赵志斌1, 张朋2, 李金元2
1. 新能源电力系统国家重点实验室(华北电力大学) 北京 102206;
2. 全球能源互联网研究院 北京 102209;
Mechanism and Characteristics of Plasma Extraction Transit Time Oscillationof Paralleled IGBT Chips
Tang Xinling1, Cui Xiang1, Zhao Zhibin1, Zhang Peng2, Li Jinyuan2
1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China;
2. Global Energy Interconnection Research Institute Beijing 102209 China;
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摘要 大功率IGBT器件内部通常由多个芯片并联实现大电流。并联IGBT芯片在关断的拖尾阶段存在高频等离子体抽取渡越时间(PETT)振荡,这种振荡会对环境、驱动电路产生严重的电磁干扰。针对空穴注入空间电荷区后引起的空间电荷效应,首次分析空间电荷区的小信号特性,研究IGBT芯片自激振荡产生的原因,揭示高频PETT振荡的机理。其次,研究并联IGBT芯片之间寄生电感与产生PETT振荡时集射极电压的相互关系,基于理论方法计算振荡电压范围以及振荡频率的特点。最后,搭建IGBT开关特性测试平台,对并联IGBT芯片的PETT振荡特性进行测试。实验结果表明,PETT振荡不是随机产生,振荡产生的时刻与集电极电流具有一定的相关性;并联IGBT芯片振荡电压的范围与理论计算范围相吻合;并联IGBT芯片振荡频率的范围也与理论计算范围相吻合。因此,实验结果验证了对PETT振荡特性分析的正确性。
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唐新灵
崔翔
赵志斌
张朋
李金元
关键词 绝缘栅双极型晶体管等离子体抽取渡越时间振荡小信号模型寄生电感    
Abstract:High power IGBT usually contains several IGBT chips to obtain a high current handling capability. Plasma extraction transit time (PETT) oscillation exists in the tail phase during the turn-off process of paralleled IGBT chips, which causes serious electromagnetic interference to the environment and drive circuit. At first, the small signal characteristic of space charge region caused by injection of carriers is analyzed in this paper. Then, the relationship between package parasitic inductance and oscillating voltage range is investigated, the oscillation voltage range and frequency are deduced based on theoretical analysis. At last, an IGBT dynamic test platform is built, and the PETT oscillation characteristics of two paralleling IGBT chips are studied. Experimental results indicate that PETT oscillation is not randomly generated, which has certain relevance with collector current value.In addition, the experimental results are in agreement with the calculated results for oscillation voltage range and oscillation frequency. Therefore, the correctness of the analysis of PETT oscillation characteristics is verified.
Key wordsInsulated gate bipolar transistor (IGBT)    plasma extraction transit time oscillation    small signal model    parasitic inductance   
收稿日期: 2016-12-09      出版日期: 2018-05-24
PACS: TM12  
基金资助:国家重大科技专项02专项(2015ZX02301),国家自然科学基金(51477048),国家能源应用技术研究及示范工程(NY20150705)和中央高校基本科研业务费专项资金(JB2016112)资助项目
通讯作者: 唐新灵 男,1988年生,博士研究生,研究方向为柔性直流输电用大功率半导体器件。E-mail: tang_xl@ncepu.edu.cn   
作者简介: 崔翔 男,1960年生,教授,博士生导师,研究方向为电磁场理论及其应用、先进输电技术、电力系统电磁环境与电磁兼容。E-mail: x.cui@ncepu.edu.cn
引用本文:   
唐新灵, 崔翔, 赵志斌, 张朋, 李金元. 并联IGBT芯片的等离子体抽取渡越时间振荡机理及其特性分析[J]. 电工技术学报, 2018, 33(10): 2354-2364. Tang Xinling, Cui Xiang, Zhao Zhibin, Zhang Peng, Li Jinyuan. Mechanism and Characteristics of Plasma Extraction Transit Time Oscillationof Paralleled IGBT Chips. Transactions of China Electrotechnical Society, 2018, 33(10): 2354-2364.
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