Application of Compressed Sensing Method in Condition Monitoring of Insulated Gate Bipolar Transistor
Li Ting1, Chen Jie1,2, Yu Hong1, Qiu Ruichang1,2, Liu Zhigang1,2
1. School of Electrical Engineering Beijing Jiaotong University Beijing 100044 China;
2. Beijing Engineering Research Center for Electrical Rail Transit Beijing 100044 China
In this paper, the compressed sensing theory was introduced to effectively reduce the sampling frequency of IGBT condition monitoring system. For power semiconductor devices, accurate measurement of various electrical parameters is an important basis to ensure the prediction accuracy of the condition monitoring system. Turn-off peak voltage is one of the important parameters to judge the aging state of IGBT, and its acquisition method relies heavily on the high-speed sampling unit. In order to greatly reduce the amount of data needed in the process of signal acquisition, compressed sensing theory was introduced to compress sampling and reconstruction of signals. Since the turn off voltage waveform has no significant sparsity in time domain, Fourier basis and discrete wavelet basis were introduced to represent the signal sparsely, and their sparsity under different transform bases was discussed. In addition, in order to facilitate the practical engineering implementation of compressed sensing theory, the reconstruction accuracy of signals under different observation matrices was compared and analyzed. Finally, through simulation experiments and data analysis, the feasibility and accuracy of applying compressed sensing theory to the condition monitoring system based on turn off peak voltage were verified.
[1] Falck J, Felgemacher C, Rojko A, et al.Reliability of power electronic systems: an industry perspective[J]. IEEE Industrial Electronics Magazine, 2018, 12(2): 24-35.
[2] Millan J, Godignon P, Perpina X, et al.A survey of wide bandgap power semiconductor devices[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2155-2163.
[3] 陈民铀, 高兵, 杨帆, 等. 基于电-热-机械应力多物理场的IGBT焊料层健康状态研究[J]. 电工技术学报, 2015, 30(20): 252-260.
Chen Minyou, Gao Bing, Yang Fan, et al.Healthy evaluation on IGBT solder based on electro-thermal-mechanical analysis[J]. Transactions of China Electrotechnical Society, 2015, 30(20): 252-260.
[4] Wang Huai, Liserre M, Blaabjerg F.Toward reliable power electronics: challenges, design tools, and opportunities[J]. Industrial Electronics Magazine IEEE, 2013, 7(2): 17-26.
[5] Choi U M, Blaabjerg F, Jørgensen S, et al. Reliability improvement of power converters by means of condition monitoring of IGBT modules[J]. IEEE Transactions on Power Electronics, 2017, 32(10): 7990-7997.
[6] Yang Shaoyong, Xiang Dawei, Bryant A, et al.Condition monitoring for device reliability in power electronic converters: a review[J]. IEEE Transactions on Power Electronics, 2010, 25(11): 2734-2752.
[7] 李亚萍, 周雒维, 孙鹏菊, 等. 基于特定集电极电流下饱和压降的IGBT模块老化失效状态监测方法[J]. 电工技术学报, 2018, 33(14): 3202-3212.
Li Yaping, Zhou Luowei, Sun Pengju, et al.Condition monitoring for IGBT module aging failure on VCE(on) under certain IC conditions[J]. Transactions of China Electrotechnical Society, 2018, 33(14): 3202-3212.
[8] 赖伟. 计及低强度热载荷疲劳累积效应的IGBT功率器件寿命模型研究[D]. 重庆: 重庆大学, 2016.
[9] 王学梅, 张波, 吴海平. 基于失效物理的功率器件疲劳失效机理[J]. 电工技术学报, 2019, 34(4): 717-727.
Wang Xuemei, Zhang Bo, Wu Haiping.A review of fatigue mechanism of power devices based on physics-of-failure[J]. Transactions of China Electrotechnical Society, 2019, 34(4): 717-727.
[10] Mandeya R, Chen Cuili, Pickert V, et al.Gate-emitter pre-threshold voltage as a health sensitive parameter for IGBT chip failure monitoring in high voltage multichip IGBT power modules[J]. IEEE Transactions on Power Electronics, 2019, 34(9): 9158-9169.
[11] 陈民铀, 陈一高, 高兵, 等. 考虑老化进程对热参数影响的IGBT模块寿命评估[J]. 中国电机工程学报, 2017, 37(18): 5427-5436, 5542.
Chen Minyou, Chen Yigao, Gao Bing, et al.Lifetime estimation of IGBT module considering influence of aging process on thermal parameters[J]. Proceedings of the CSEE, 2017, 37(18): 5427-5436, 5542.
[12] Liu Jingcun, Zhang Guogang, Chen Qian, et al.Insitu condition monitoring of IGBTs based on the miller plateau duration[J]. IEEE Transactions on Power Electronics, 2019, 34(1): 769-782.
[13] Brown D W, Abbas M, Ginart A, et al.Turn-off time as an early indicator of insulated gate bipolar transistor latch-up[J]. IEEE Transactions on Power Electronics, 2012, 27(2): 479-489.
[14] Sonnenfeld G, Goebel K, Celaya J R.An agile accelerated aging, characterization and scenario simulation system for gate controlled power transistors[C]//IEEE Autotestcon, Salt Lake City, UT, USA, 2008: 208-215.
[15] Hanif A, Yu Yuechuan, DeVoto D, et al. A comprehensive review toward the state-of-the-art in failure and lifetime predictions of power electronic devices[J]. IEEE Transactions on Power Electronics, 2019, 34(5): 4729-4746.
[16] Wang Ye, Ma Mingyao, Yuan Kexiang, et al.A plug-and-play condition monitoring system for IGBT module bonding wires[C]//IEEE International Power Electronics and Application Conference and Exposition, Shenzhen, China, 2018: 1-5.
[17] Wuest F, Trampert S, Sehr F, et al.Integrated condition monitoring by measuring the delay of gate turn-off[C]//European Microelectronics and Packaging Conference & Exhibition, Pisa, Italy, 2019.
[18] 王学伟, 王琳, 苗桂君, 等. 暂态和短时电能质量扰动信号压缩采样与重构方法[J]. 电网技术, 2012, 36(3): 191-196.
Wang Xuewei, Wang Lin, Miao Guijun, et al.An approach for compressive sampling and reconstruction of transient and short-time power quality disturbance signals[J]. Power System Technology, 2012, 36(3): 191-196.
[19] 田霄, 贺建军, 喻寿益. 基于压缩感知理论的谐波畸变电压信号采集方法研究[J]. 电工电能新技术, 2014, 33(11): 61-64, 69.
Tian Xiao, He Jianjun, Yu Shouyi.Study on harmonic distortion of voltage signal acquisition method based on compressed sensing theory[J]. Advanced Technology of Electrical Engineering and Energy, 2014, 33(11): 61-64, 69.
[20] 董唯光, 张晓东, 郭俊锋, 等. 基于坐标变换的风电变流器电压信号CS压缩方法[J]. 电子测量与仪器学报, 2016, 30(12): 1818-1827.
Dong Weiguang, Zhang Xiaodong, Guo Junfeng, et al.Compressed sensing compression method for wind power converter voltage signal based on coordinate transformation[J]. Journal of Electronic Measurement and Instrument, 2016, 30(12): 1818-1827.
[21] Li Hao, Xiang Dawei, Yang Xingwu, et al.Compressed sensing method for IGBT high-speed switching time on-line monitoring[J]. IEEE Transactions on Industrial Electronics, 2018, 66(4): 1.
[22] 姜媛媛. 电力电子电路故障诊断及预测关键技术研究[D]. 南京: 南京航空航天大学, 2018.
[23] 王侠, 王开, 王青云, 等. 压缩感知中的确定性随机观测矩阵构造[J]. 信号处理, 2014, 30(4): 436-442.
Wang Xia, Wang Kai, Wang Qingyun, et al.Deterministic random measurement matrices construction for compressed sensing[J]. Journal of Signal Processing, 2014, 30(4): 436-442.
[24] 李臻, 罗林根, 盛戈皞, 等. 基于压缩感知的特高频局部放电定位法[J]. 电工技术学报, 2018, 33(1): 202-208.
Li Zhen, Luo Lingen, Sheng Gehao, et al.Ultrahigh frequency partial discharge localization methodology based on compressed sensing[J]. Transactions of China Electrotechnical Society, 2018, 33(1): 202-208.