Application of Compressed Sensing Method in Condition Monitoring of Insulated Gate Bipolar Transistor
Li Ting1, Chen Jie1,2, Yu Hong1, Qiu Ruichang1,2, Liu Zhigang1,2
1. School of Electrical Engineering Beijing Jiaotong University Beijing 100044 China;
2. Beijing Engineering Research Center for Electrical Rail Transit Beijing 100044 China
In this paper, the compressed sensing theory was introduced to effectively reduce the sampling frequency of IGBT condition monitoring system. For power semiconductor devices, accurate measurement of various electrical parameters is an important basis to ensure the prediction accuracy of the condition monitoring system. Turn-off peak voltage is one of the important parameters to judge the aging state of IGBT, and its acquisition method relies heavily on the high-speed sampling unit. In order to greatly reduce the amount of data needed in the process of signal acquisition, compressed sensing theory was introduced to compress sampling and reconstruction of signals. Since the turn off voltage waveform has no significant sparsity in time domain, Fourier basis and discrete wavelet basis were introduced to represent the signal sparsely, and their sparsity under different transform bases was discussed. In addition, in order to facilitate the practical engineering implementation of compressed sensing theory, the reconstruction accuracy of signals under different observation matrices was compared and analyzed. Finally, through simulation experiments and data analysis, the feasibility and accuracy of applying compressed sensing theory to the condition monitoring system based on turn off peak voltage were verified.
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2022, Vol. 37 
