High Performance 750A/6500V IGBT Module Based on Full-Copper Processes
Liu Guoyou1,2, Luo Haihui1,3, Zhang Hongxin1,3, Wang Yangang1,3, Pan Zhaohai1,3
1. State Key Laboratory of Advanced Power Semiconductor Devices Zhuzhou 412001 China; 2. Zhuzhou CRRC Times Electric Co. Ltd Zhuzhou 412001 China; 3. Zhuzhou CRRC Times Semiconductor Co. Ltd Zhuzhou 412001 China
Abstract：The mismatch of coefficient of thermal expansion (CTE) of heterogeneous materials in high power IGBT modules is the main mechanism of module fatigue and aging failure. The idea of full-copper power interconnection in power module was proposed in order to reduce the difference of CTE between heterogeneous materials and improve its power cycle capability and long-term operation reliability in this paper. The new technologies such as IGBT chip copper metallization, copper wire bonding and copper busbar terminal ultrasonic welding were systematically investigated. A complete set of process technology for full-copper packaging of IGBT module was realized and 750A/6500V high performance IGBT module was developed for the first time. Compared with the traditional aluminum process, the full-copper process module reduced the conduction loss by 10%, and increased more than 20% higher surge current capability and sixteen times higher power cycling capability as well. The operation ruggedness and application reliability of power module were also improved.
刘国友, 罗海辉, 张鸿鑫, 王彦刚, 潘昭海. 基于全铜工艺的750A/6500V高性能IGBT模块[J]. 电工技术学报, 2020, 35(21): 4501-4510.
Liu Guoyou, Luo Haihui, Zhang Hongxin, Wang Yangang, Pan Zhaohai. High Performance 750A/6500V IGBT Module Based on Full-Copper Processes. Transactions of China Electrotechnical Society, 2020, 35(21): 4501-4510.
[1] 刘国友, 覃荣震, 黄建伟, 等. 高功率密度IGBT模块的研发与特性分析[J]. 机车电传动, 2014 (2): 6-11. Liu Guoyou, Qin Rongzhen, Huang Jianwei, et al.Development and characterization of high power density IGBT module[J]. Electric Drive for Locomotives, 2014 (2): 6-11. [2] 丁荣军, 刘国友. 轨道交通用高压IGBT技术特点及其发展趋势[J]. 机车电传动, 2014(1): 1-6. Ding Rongjun, Liu Guoyou.Technical features and development trend of high-voltage IGBT for rail transit traction application[J]. Electric Drive for Locomotives, 2014(1): 1-6 [3] 刘国友, 罗海辉, 李群锋, 等. 轨道交通用750A/6500V高功率密度IGBT模块[J]. 机车电传动, 2016(6): 21-26. Liu Guoyou, Luo Haihui, Li Qunfeng, et al.750 A/6500 V high power density IGBT module for rail transit application[J]. Electric Drive for Locomotives, 2016(6): 21-26. [4] 汪波, 罗毅飞, 张烁, 等. IGBT极限功耗与热失效机理分析[J]. 电工技术学报, 2016, 31(12): 135-141. Wang Bo, Luo Yifei, Zhang Shuo, et al.Analysis of limiting power dissipation and thermal failure mechanism[J]. Transactions of China Electrotecnical Society, 2016, 31(12): 135-141. [5] 唐新灵, 崔翔, 赵志斌, 等. 并联IGBT芯片的等离子体抽取渡越时间振荡机理及其特性分析[J]. 电工技术学报, 2018, 33(10): 254-264. Tang Xinling, Cui Xiang, Zhao Zhibin, et al.Mechanism and characteristics of plasma extraction transit time oscillationof paralleled IGBT chips[J]. Transactions of China Electrotecnical Society, 2018, 33(10): 254-264. [6] 彭英舟, 周雒维, 张晏铭, 等. 基于键合线等效电阻的IGBT模块老化失效研究[J]. 电工技术学报, 2017, 32(20): 117-123. Peng Yingzhou, Zhou Luowei, Zhang Yanming, et al.Study of IGBT module aging failure base onr bond wire equivalent resistance[J]. Transactions of China Electrotecnical Society, 2017, 32(20): 117-123. [7] Karsten G, Dirk S, Jens G, et al.New assembly and interconnects beyond sintering methods[C]// Proceedings of PCIM Europe 2010; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2010: 219-224. [8] Liu Guoyou, Zhang Hongxin, Luo H, et al.6500V IGBT with a novel low-stress copper metallization[C]// Proceedings of PCIM Europe 2019, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2019: 776-780. [9] Frank H, Roman R, Carsten S, et al.Reliability aspects of copper metallization and interconnection technology for power devices[J]. Microelectronics Reliability, 2016, 64: 393-402. [10] Siepe D, Bayerer R, Roth R.The future of wire bonding is? wire bonding![C]//CIPS 2010, 6th International Conference on Integrated Power Electronics Systern, Berlin, Germany, 2010: 115-118. [11] Roth R, Schulze H, Schaffer C.et al.Power Cu metallization for future power devices-Process integration concept and reliability[C]//28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech, 2016, DOI: 10.1109/ISPSD.2016. 7520811. [12] Alam S M, Wei F L, Gan C L, et al.Electromigration reliability comparison of Cu and Al interconnects[C]// Sixth international symposium on quality electronic design (isqed'05), San Jose, CA, USA, 2005, DOI: 10.1109/ISQED.2005.51. [13] 庞恩文, 林晶, 汪荣昌, 等. 铜布线工艺中阻挡层钽膜的研究[J]. 固体电子学研究与进展, 2002, 22(1): 78-81. Pang Enwen, Lin Jing, Wang Rongchang, et al.Properties of Ta film as diffusion barrier in the copper metallization[J]. Research & Progress of Solid State Electronics, 2002, 22(1): 78-81. [14] 刘国友, 覃荣震, 黄建伟. 功率半导体芯片的铜金属化结构及其制备方法[P]. 中国: ZL201410213230.6, 2016. [15] Zhu Changchun, Zhao Hongpo, Han Jianqiang, et al.The residual stress in MEMS thin films[J]. Micronanoelectronic Technology, 2003(10): 30-34. [16] Hirsch E H.Stress in porous thin films through adsorption of polar molecules[J]. Journal of Physics D: Applied Physics, 1980, DOI: 10.1088/0022-3727/13/ 11/018. [17] Hunger T, Schilling O, Wolter F, et al.Numerical and experimental study on surge current limitations of wire-bonded power diodes[C]//Proceedings of PCIM Europe 2007, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2007. [18] Baburske R, Lutz J, Schulze H J, et al. The trade-off between surge current and reverse recovery behaviour of high-voltage power diodes[C]// Conference: 10th International Seminar on Power Semiconductors (ISPS), At CTU Prague, 2010, https://www. researchgate.net/publication/267426070. [19] Gross D, Haag S, Reinold M, et al.Correlation between chip metallization properties and the mechanical stability of heavy Cu wire bonds[C]// Proceedings of PCIM Europe 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2015: 1312-1319.
2020, Vol. 35 
