Abstract：The trench field-stop (FS) configuration represents the latest generation of the insulated gate bipolar transistor (IGBT). The trench gate and plane gate have great differences in base carrier transportation and gate junction capacitance calculation. Hence, error would exist inevitably if the modeling method still follows the plane gate configuration. Therefore, based on the analysis of the trench FS structure and the modeling coordinate, base region is divided into PNP and PIN components considering 2D effects of base carrier transportation. The calculation methods of gate junction capacitance are thus analyzed according to whether the trench gate in the PIN part is covered by the depletion layer in the PNP part. Finally, the proposed mathematical modeling method of the transient process of the trench FS IGBT was verified by simulations and experiments.
汪波, 罗毅飞, 刘宾礼, 普靖. 沟槽栅场终止型IGBT瞬态数学模型[J]. 电工技术学报, 2017, 32(12): 50-57.
Wang Bo, Luo Yifei, Liu Binli, Pu Jing. Transient Mathematical Model of Trench Field-Stop IGBT. Transactions of China Electrotechnical Society, 2017, 32(12): 50-57.
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