Abstract：Multi-chips parallel Insulated Gate Bipolar Transistor (IGBT) is the key device of large-capacity power electronic equipment, and its operational reliability has been widely concerned by the industry. Selecting the characteristic parameter which can characterize the aging state of multi-chips parallel IGBT devices is very important for the active maintenance and improvement of reliability of the system. In this paper, the effects of solder layer aging and bond wire lift-off on the electro-thermal-magnetic characteristics of the Infineon's 1.7kV multi-chips parallel IGBT module are analyzed, and the magnetic flux density is proposed as the characteristic parameter for condition monitoring of the multi-chips parallel IGBT module fatigue failure. Firstly, the steady-state conduction equivalent circuit of multi-chips parallel IGBT module was established, and the coupling relationship between module degradation and magnetic flux density was qualitatively analyzed. Secondly, based on the three-dimensional electro-thermal-magnetic finite element model, the variation and sensitivity of electro-thermal-magnetic parameters of multi-chips parallel IGBT module during aging failure process were studied. Results show that the magnetic flux density has the highest sensitivity in both failure modes, and is not affected by the change of ambient temperature. In addition, direct contact with the module circuit can be avoided during the measurement, which has little impact on the normal operation of the module. Therefore, magnetic flux density is suitable to be used as the characteristic parameter for condition monitoring of multi-chips parallel power module.
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2022, Vol. 37 
