Condition Monitoring for IGBT Module Aging Failure on VCE(on) under Certain IC Conditions
Li Yaping1, 2, Zhou Luowei1, Sun Pengju1, Peng Yingzhou1, Cai Jie1
1. State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University Chongqing 400044 China; 2. College of Mechanical and Electrical Engineering Shihezi University Shihezi 832000 China
Abstract：In order to improve the reliability of power converter, a method for monitoring aging failure in insulated gate bipolar transistor (IGBT) module is presented based on VCE(on) under certain condition. The VCE(on) is monitored under certain collector current IC condition, that is the crossover point of output characteristic curves under different temperatures. Using this method, the health status of IGBT module can be evaluated according to VCE(on), and the chip junction temperature effect on the results of the assessment can be ignored. Firstly, based on VCE(on) equivalent model of the structure of IGBT and the output characteristic curves of IGBT module, the crossover point of the collector current was analyzed. It is shown that the corresponding VCE(on) was not affected by temperature. Then, the paper illuminated the impact of the aging failure on VCE(on). Finally, two experiments, i.e. accelerated aging tests and cutting off the bond wires one by one, were conducted. The experimental results indicate that the VCE(on) of IGBT module is not affected by junction temperature under certain collector current condition, but only related to the aging situation of modules. The VCE(on) under certain condition can be used as aging precursor of condition monitoring for IGBT module. The experimental results are accorded with the theory analysis.
李亚萍, 周雒维, 孙鹏菊, 彭英舟, 蔡杰. 基于特定集电极电流下饱和压降的IGBT模块老化失效状态监测方法[J]. 电工技术学报, 2018, 33(14): 3202-3212.
Li Yaping, Zhou Luowei, Sun Pengju, Peng Yingzhou, Cai Jie. Condition Monitoring for IGBT Module Aging Failure on VCE(on) under Certain IC Conditions. Transactions of China Electrotechnical Society, 2018, 33(14): 3202-3212.
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2018, Vol. 33 
