Abstract：Literature about the reliability of insulated gate bipolar transistor (IGBT) revealed that bond wire lift-off failure is one of the most dominant factors affecting the reliability of IGBT. This paper proposed a condition monitoring method of IGBT module based on bond-wire equivalent resistance RJ. The theoretical analysis about the relationship between equivalent resistance of bond-wires and turn-off transient-waveform of IGBT was developed at first; and then the equation calculating equivalent resistance was established; finally, the relationship between bond-wire equivalent resistance and lift-off bond wires was analyzed qualitatively and quantitatively through experiments. It is concluded that bond-wire equivalent resistance RJ will increase with the increase of bond-wires lift-off, which validates the feasibility and correctness of the proposed method.
彭英舟, 周雒维, 张晏铭, 孙鹏菊, 杜雄. 基于键合线等效电阻的IGBT模块老化失效研究[J]. 电工技术学报, 2017, 32(20): 117-123.
Peng Yingzhou, Zhou Luowei, Zhang Yanming, Sun Pengju, Du Xiong. Study of IGBT Module Aging Failure Base on Bond Wire Equivalent Resistance. Transactions of China Electrotechnical Society, 2017, 32(20): 117-123.
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