1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology Tianjin 300130 China; 2. Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province Hebei University of Technology Tianjin 300130 China; 3. School of Science Tianjin University of Commerce Tianjin 300130 China
Abstract：The DC bias magnetic field caninducedistortion and asymmetry of the hysteresis loops for magnetostrictive materials, which affects the loss values and hysteresis characteristics, and the existing magnetic energy loss models cannot accurately characterize and calculate the losses under variable DC bias magnetic fields. Therefore, it is necessary to investigate the influence and mathematical expression on the magnetic properties of magnetostrictive materials when DC bias is applied, which is of great significance to optimizing the output characteristics for high-power magnetostrictive devices. In this paper, under variable DC bias, the dynamic hysteresis loops of Terfenol-D samples at different excitation frequencies and peak magnetic density fluxes are investigated, and the variation law is found when the loss characteristics and hysteresis characteristics parameters are extracted from these hysteresis loops. Based on Bertotti's loss separation theory and measured data, the Levebverg-Marquard algorithm is induced to establish a calculation model for high-frequency losses of magnetostrictive materials under DC bias. This model uses a multiple- parameter regression method to correct the loss coefficients by introducing the DC bias-related terms. The accuracy of the proposed model is verified by comparing the calculated loss values with the experimental values under various working conditions.
黄文美, 郭萍萍, 郭万里, 翁玲, 周严. 直流偏置对磁致伸缩材料高频动态损耗及磁特性的影响分析[J]. 电工技术学报, 2022, 37(22): 5765-5775.
Huang Wenmei, Guo Pingping, Guo Wanli, Weng Ling, Zhou Yan. Impact Analysis of DC Bias on High-Frequency Dynamic Loss and Magnetic Characteristics for Magnetostrictive Materials. Transactions of China Electrotechnical Society, 2022, 37(22): 5765-5775.
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