Abstract：On the background of insulategate bipolar transistor (IGBT) reliability research, this paper aims at the shortage of current thermal modelingand the extraction method of coupled thermal impedance of IGBT modules, a new discrete square wave method to extract the coupled thermal impedance between IGBT and freewheeling diode(FWD) is proposed. Based on the principle of junction temperature measurement via thermo-sensitive electrical parameters (TSEP) and the response characteristics of the thermal network, the internal thermal behavior of IGBT can be established by the measurement of the port TSEP. The IGBT module are regarded as a black box, thus the proposed extraction method can be universally applicable to a variety of internal packaging structure module. Finally, the validity and the precision ofthe proposed method is verifiedthrough experiment.
蔡杰, 周雒维, 彭英舟, 孙鹏菊, 杜雄. 一种IGBT模块端口等效耦合热阻抗的离散化方波提取法[J]. 电工技术学报, 2018, 33(7): 1440-1449.
CaiJie, Zhou Luowei, Peng Yingzhou, Sun Pengju, Du Xiong. A Discrete Square Wave Extraction Method for the Port Equivalent Coupled Thermal Impedance of IGBT Modules. Transactions of China Electrotechnical Society, 2018, 33(7): 1440-1449.
[1] Gopireddy L R, Tolbert L M, Ozpineci B.Power cycle testing of power switches: aliterature survey[J]. IEEE Transactions on Power Electronics, 2015, 30(5):2465-2473. [2] 李辉,刘盛权,冉立,等. 大功率并网风电机组变流器状态监测技术综述[J]. 电工技术学报,2016, 31(8):1-10. Li Hui, Liu Shengquan, Ran Li, et al.Overview of condition monitoring technologies of power converter for high power grid-connected wind turbine generator system[J].Transactions of China Electrotechnical Society, 2016,31(8):1-10. [3] 郑利兵, 韩立, 刘钧, 等. 基于三维热电耦合有限元模型的IGBT 失效形式温度特性研究[J]. 电工技术学报, 2011, 26(7): 242-246. ZhengLibin, Han li, Liu Jun, et al. Investigation of the temperature character of IGBT failure mode basedon 3D thermal-electro coupling FEM[J]. Transactions of China Electrotechnical Society, 2011, 26(7): 242-246. [4] 陈民铀, 高兵, 杨帆,等. 基于电-热-机械应力多物理场的IGBT焊料层健康状态研究[J]. 电工技术学报, 2015, 30(20):252-260. Cheng Mingyou, Gao Bin, Yang Fan, et al.Healthy evaluation onIGBTsolderbased on electro-thermal-mechanicalanalysis[J]. Transactions of China Electrotechnical Society, 2015, 30(20):252-260. [5] Due J, Munk-Nielsen S, Nielsen R.Lifetime investigation of high power IGBT modules[C]//IEEEEuropean Conference on Power Electronics and Applications,2011, Birmingham, United Kingdom, 2011:1-8. [6] Fabis P M, Shum D, Windischmann H.Thermal modeling of diamond-based power electronics packaging[C] //Annual IEEE Semiconductor Thermal Measurement & Management Symposium,San Diego, CA, USA,1999:98-104. [7] 黄月强, 吕长志, 谢雪松,等. 一种IGBT热阻的测量方法[J]. 电力电子技术, 2010, 44(9):104-105. Huang Yueqiang, LüChangzhi, XieXuesong, etal. One measurement method of thermal resistance of IGBT[J]. Power Electronics, 2010, 44(9):104-105. [8] 李学生, 张新闻, 常玉峰,等. 基于半导体功率损耗的小型风电变换器可靠性研究[J]. 电力系统保护与控制, 2015, 43(19):15-21. Li Xuesheng, Zhang Xinwen, Chang Yufeng, etal.Small wind power converter reliability research based on semiconductor power loss[J].Power System Protection and Control, 2015, 43(19):15-21. [9] 杜雄, 李高显, 孙鹏菊,等. 考虑基频结温波动的风电变流器可靠性评估[J]. 电工技术学报, 2015, 30(10):258-265. DuXiong, Li Gaoxian, Sun Pengju, etal. Reliability evaluation of wind power converters consideringthe fundamental frequency junction temperaturefluctuations[J].Transactions of China Electrotechnical Society,2015, 30(10):258-265. [10] Lutz J, Schlangenotto H, Scheuermann U, et al.Semiconductor power devices physics, characteristics, reliability[M].New York: Springer, 2011. [11] 杜雄, 李高显, 刘洪纪,等. 风速概率分布对风电变流器中功率器件寿命的影响[J]. 电工技术学报, 2015, 30(15):109-117. DuXiong, Li Gaoxian, Liu Hongji, etal.Effect of wind speed probability distribution on lifetime of powersemiconductors in the wind power converters[J].Transactions of China Electrotechnical Society, 2015, 30(15):109-117. [12] Cheng J, He X, Li X, et al.Thermal coupling effects and thermal resistance matrix research of multi-heat sources MCM[C]//IEEEInternational Conference on Reliability, Maintainability and Safety, 2014,Colorado Springs, CO, USA, 2014:715-719. [13] Bahman A S, Ma K, Blaabjerg F.A novel 3D thermal impedance model for high power modules considering multi-layer thermal coupling and different heating/cooling conditions[C]//IEEE Applied Power Electronics Conference and Exposition (APEC), 2015, Charlotte, USA, 2015: 1209-1215. [14] Bahman A S, Ma K, Blaabjerg F.Thermal impedance model of high power IGBT modules considering heat coupling effects[C]//International Power Electronics and Application Conference and Exposition, 2014, Shanghai, China, 2014:1382-1387. [15] Li H, Liao X, Li Y, et al.Improved thermal couple impedance model and thermal analysis of multi-chip paralleled IGBT module[C]//IEEE Energy Conversion Congress and Exposition (ECCE), 2015,Montreal, Canada, 2015: 3748-3753. [16] Scheuermann U, Schmidt R.Investigations on the Vce (t)-method to determine the junction temperature by using the chip itself as sensor[C]//PCIM Europe, Nuremberg, Germany, 2009: 802-807. [17] Niu H, Lorenz R D.Sensing IGBT junction temperature using gate drive output transient properties[C]//IEEE Applied Power Electronics Conference and Exposition (APEC), 2015, Charlotte, USA, 2015:2492-2499. [18] Avenas Y, Dupont L, Khatir Z.Temperature measurement of power semiconductor devices by thermo-sensitive electrical parameters-areview[J]. IEEE Transactions onPower Electronics, 2012, 27(6):3081-3092. [19] Du X, Li T, Zhang J, et al.Thermal network parameter identification of IGBT module based on the cooling curve of junction temperature[C]//IEEE Applied Power Electronics Conference and Exposition (APEC), 2016,Tampa, Florida, 2016: 2992-2997. [20] Nenadovic N, Mijalkovic S, Nanver L K, et al.Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors[J]. IEEE Journal of Solid-State Circuits, 2004, 39(10):1764-1772. [21] Whitehead M J, Johnson C M.Junction temperature elevation as a result of thermal cross coupling in a multi-device power electronic module[C]//IEEEElectronics Systemintegration Technology Conference, Dresden, Germany,2006:1218-1223. [22] Whitehead M J, Johnson C M.Determination of thermal cross-coupling effects in multi-device power electronic modules[C]//The 3rd IET International Conference on Power Electronics, Machines and Drives, Dublin, Ireland, 2006: 261-265. [23] JayantBaligaB. Fundamentals of power semiconductor devices[M]. New York: Springer Verlag, 2008. [24] Schweitzer D, Pape H, Liu C, et al.Transient dual interface measurement-a new JEDEC standard for the measurement of the junction-to-case thermal resistance[C]//IEEE Semiconductor Thermal Measurement & Management Symposium,2011, 222-229.
2018, Vol. 33 
