Abstract：The parallel connection of several chips in the PPI device is an important means to improve its current level. However, the transient current imbalance between IGBT chips is one of the main reasons that limit its current increase. It is important to study the transient current distribution in the PPI IGBT device for the package design. The existing research usually adopts the simulation method, but it does not consider the internal physical process of IGBT, and the simulation results often have a big deviation from the experimental results. In this paper, an integrated circuit model containing the package stray inductance and the internal physical characteristics of IGBT is established, and the influence law of the stray inductance on the current distribution is obtained. After that, the validity of the simulation results is verified by the double-pulse experiment platform. Firstly, three stray inductances inside the 3.3 kV/1 500 A PPI device are extracted, and the differences in stray inductances under different IGBT chip positions are obtained. It is found that the maximum difference of emitter stray inductance is 15.36 nH and the change rate of emitter stray inductance is 43.43%, the maximum difference of gate stray inductance is 8.84 nH and the change rate of gate stray inductance is 11.22%. Secondly, three stray inductance differences are analyzed in theory, it is found that the current imbalance of IGBT chips is mainly affected by emitter stray inductance on the common branch of the power circuit and drive circuit. At the same time, the carrier behavior inside IGBT is analyzed, and it is found that the difference of emitter stray inductance mainly affects the current imbalance in the turn-on process. Then, an IGBT integrated simulation circuit is established in the simulation software, which includes the packaged stray inductance and the internal physical characteristics of IGBT chips. The difference of each stray inductance is calculated, and the influence rule of each stray inductor difference on the current distribution is obtained. When the difference between gate stray inductances LG and collector stray inductances LC is set separately, there is no obvious difference between the IGBT chip current. Only when the emitter inductance LE is different, the current distribution phenomenon will be obvious in the turn-on process. Through the calculation, the simulation results can correspond well with the theoretical analysis. Finally, a double pulse experiment platform with two parallel chips is established. The difference in stray inductance is realized by sliding the busbar. The stray inductance range of the double-branch experimental platform (23.1~49.7 nH) can reflect the stray inductance range of the real PPI device (35.36~50.72 nH). Through experiments, it is found that the current of the two chips is relatively uniform in the turn-off process, while the current is different in the turn-on process. The current difference increases with the increase of the stray inductance difference. When the busbar connection point is P1, the current of IGBT1 reaches 91.45 A and that of IGBT2 is 56.39 A, the difference is 35.06 A. The current imbalance rate reaches 23.7%, and the experimental results further verify the validity of theoretical analysis and simulation results The following conclusions can be drawn from the simulation analysis: (1) Different positions of IGBT chips in PPI have different stray inductances. Taking 3.3 kV/1 500 A as an example, the maximum change rate of emitter stray inductance is 43.43% and the change rate of gate stray inductance is 11.22%. (2) The current imbalance of IGBT chips is mainly affected by the difference in emitter inductance. Through the circuit analysis, it is found that the emitter inductance affects the change rate of VGE, thus affecting the current sharing among IGBT chips. (3) Both external characteristics and internal carrier behavior of IGBT chips are considered, it is found that the difference of emitter stray inductance mainly affects the current imbalance in the turn-on process, but hardly affects the turn-off process.
彭程, 李学宝, 范迦羽, 赵志斌, 崔翔. 压接型IGBT器件内部杂散电感差异对瞬态电流分布影响规律研究[J]. 电工技术学报, 2023, 38(11): 2850-2860.
Peng Cheng, Li Xuebao, Fan Jiayu, Zhao Zhibin, Cui Xiang. Effect of Stray Inductance Difference on Transient Current Distribution in Press-Pack IGBT Devices. Transactions of China Electrotechnical Society, 2023, 38(11): 2850-2860.
[1] Baliga B J, Adler M S, Love R P, et al.The insulated gate transistor: a new three-terminal MOS-controlled bipolar power device[J]. IEEE Transactions on Electron Devices, 1984, 31(6): 821-828. [2] Iwamuro N, Laska T.IGBT history, state-of-the-art, and future prospects[J]. IEEE Transactions on Electron Devices, 2017, 64(3): 741-752. [3] Shigekane H, Kirihata H, Uchida Y.Developments in modern high power semiconductor devices[C]// Proceedings of the 5 th International Symposium on Power Semiconductor Devices and ICs, Monterey, CA, USA, 1993: 16-21. [4] Wakeman F, Lockwood G, Davies M, et al.Pressure contact IGBT, the ideal switch for high power applications[C]//Conference Record of the 1999 IEEE Industry Applications Conference, Phoenix, AZ, USA, 1999: 700-707. [5] 刘国友, 窦泽春, 罗海辉, 等. 高功率密度3600A/ 4500V压接型IGBT研制[J]. 中国电机工程学报, 2018, 38(16): 4855-4862, 4991. Liu Guoyou, Dou Zechun, Luo Haihui, et al.Development of high power density 3600A/4500V press-pack IGBT[J]. Proceedings of the CSEE, 2018, 38(16): 4855-4862, 4991. [6] 顾妙松, 崔翔, 彭程, 等. 外部汇流汇流排对压接型IGBT器件内部多芯片并联均流特性的影响[J]. 中国电机工程学报, 2020, 40(1): 234-245, 390. Gu Miaosong, Cui Xiang, Peng Cheng, et al.Influence of the external busbar on current sharing performance inside a multi-chip press-pack IGBT device[J]. Proceedings of the CSEE, 2020, 40(1): 234-245, 390. [7] Wu Rui, Smirnova L, Wang Huai, et al.Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules[C]//2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia), Seoul, Korea (South), 2015: 850-856. [8] 张一鸣, 邓二平, 赵志斌, 等. 压接型IGBT器件封装内部多物理场耦合问题研究概述[J]. 中国电机工程学报, 2019, 39(21): 6351-6365. Zhang Yiming, Deng Erping, Zhao Zhibin, et al.A review of the multiphysics coupling problem in press pack IGBT[J]. Proceedings of the CSEE, 2019, 39(21): 6351-6365. [9] 张玉斌, 温英科, 阮琳. 全浸式蒸发冷却IGBT电热耦合模型研究[J]. 电工技术学报, 2022, 37(15): 3845-3856. Zhang Yubin, Wen Yingke, Ruan Lin.Research on electrothermal coupling model of fully-immersed evaporative cooling IGBT[J]. Transactions of China Electrotechnical Society, 2022, 37(15): 3845-3856. [10] 丁雪妮, 陈民铀, 赖伟, 等. 多芯片并联IGBT模块老化特征参量甄选研究[J]. 电工技术学报, 2022, 37(13): 3304-3316, 3340. Ding Xueni, Chen Minyou, Lai Wei, et al.Selection of aging characteristic parameter for multi-chips parallel IGBT module[J]. Transactions of China Electrotechnical Society, 2022, 37(13): 3304-3316, 3340. [11] Li Helong, Zhou Wei, Wang Xiongfei, et al.Influence of paralleling dies and paralleling half-bridges on transient current distribution in multichip power modules[J]. IEEE Transactions on Power Electronics, 2018, 33(8): 6483-6487. [12] Castellazzi A, Ciappa M, Fichtner W, et al.A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs[J]. Microelectronics Reliability, 2007, 47(9/10/11): 1713-1718. [13] Chang Yao, Zhou Yu, Luo Haoze, et al.A comprehensive investigation of dynamic switching performance for press-pack IGBT modules[C]//2017 19 th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), Warsaw, Poland, 2017: 1-9. [14] 刘盛福, 常垚, 李武华, 等. 压接式IGBT模块的动态特性测试平台设计及杂散参数提取[J]. 电工技术学报, 2017, 32(22): 50-57. Liu Shengfu, Chang Yao, Li Wuhua, et al.Dynamic switching characteristics test platform design and parasitic parameter extraction of press-pack IGBT modules[J]. Transactions of China Electrotechnical Society, 2017, 32(22): 50-57. [15] Gu Miaosong, Cui Xiang, Tang Xinling, et al.An electro-thermo-mechanical model basing on experimental results for press-pack IGBT including MOS side two-dimensional effects[C]//2019 IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, USA, 2019: 502-507. [16] Luo Yifei, Xiao Fei, Liu Binli, et al.A physics-based transient electrothermal model of high-voltage press-pack IGBTs under HVDC interruption[J]. IEEE Transactions on Power Electronics, 2020, 35(6): 5660-5669. [17] 顾妙松, 崔翔, 彭程, 等. 电极结构与空间布置对压接型IGBT器件内部多芯片并联均流的影响(一):计算研究[J]. 中国电机工程学报, 2020, 40(7): 2318-2329, 2410. Gu Miaosong, Cui Xiang, Peng Cheng, et al.Influence of electrode structure and arrangement on current sharing performance inside a multi-chip press-pack IGBT device (part Ⅰ): analysis and calculation[J]. Proceedings of the CSEE, 2020, 40(7): 2318-2329, 2410. [18] 顾妙松, 崔翔, 彭程, 等. 电极结构与空间布置对压接型IGBT器件内部多芯片并联均流的影响(二):实验研究[J]. 中国电机工程学报, 2020, 40(10): 3288-3297. Gu Miaosong, Cui Xiang, Peng Cheng, et al.Influence of electrode structure and arrangement on current sharing performance inside a multi-chip press-pack IGBT device (part Ⅱ): experiment[J]. Proceedings of the CSEE, 2020, 40(10): 3288-3297. [19] Hefner A R, Diebolt D M.An experimentally verified IGBT model implemented in the Saber circuit simulator[C]//PESC '91 Record 22 nd Annual IEEE Power Electronics Specialists Conference, Cambridge, MA, USA, 2002: 10-19. [20] 彭程, 李学宝, 顾妙松, 等. 压接型IGBT器件内部芯片电流测量时罗氏线圈的误差分析及改进方法[J]. 中国电机工程学报, 2020, 40(22): 7388-7398. Peng Cheng, Li Xuebao, Gu Miaosong, et al.Error analysis and improvement method of Rogoswski coil in current measurement of internal chips in press-pack IGBT devices[J]. Proceedings of the CSEE, 2020, 40(22): 7388-7398. [21] 彭程, 李学宝, 张冠柔, 等. 压接型IGBT芯片动态特性实验平台设计与实现[J]. 电工技术学报, 2021, 36(12): 2471-2481. Peng Cheng, Li Xuebao, Zhang Guanrou, et al.Design and implementation of an experimental platform for dynamic characteristics of press-pack IGBT chip[J]. Transactions of China Electrotechnical Society, 2021, 36(12): 2471-2481. [22] Li Helong, Munk-Nielsen S, Bęczkowski S, et al.Effects of auxiliary source connections in multichip power module[C]//2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA, 2016: 3101-3106.
2023, Vol. 38 
