Analytical Calculation Method for Stray Inductance of Converter Busbar Based on Full Silicon Carbide Power Module
Liu Bo1, Liu Weizhi2, Dong Kan2, Ma Qiang3, Diao Lijun1
1. School of Electrical Engineering Beijing Jiaotong University Beijing 100044 China; 2. Locomotive & Vehicle Research Institute of China Academy of Railway Sciences Beijing Zongheng Electro-Mechanical Technology Co. Ltd Beijing 100094 China; 3. CRRC Changchun Railway VEHICLES Co. Ltd Changchun 130000 China
Abstract：The high switching speed of silicon carbide (SiC) devices makes them more sensitive to stray parameters and easily excites high-frequency oscillations and overshoot. Therefore, it is necessary to accurately calculate the stray inductance of the power circuit, and the busbar inductance is the most critical. This paper first analyzes and compares existing busbar models, and proposes a calculation method of busbar inductance that takes into account the skin effect. On this basis, based on finite element simulation, the influence of spatial geometric parameters, device layout and busbar openings on the busbar inductance is quantitatively analyzed. Moreover, through the least squares approximation, the analytical calculation formula for the inductance of the busbar with multiple different structures is obtained. Finally, this method is used to calculate the bus inductance of the 1 200V/423A SiC MOSFET test platform, and the results are compared with Ansys Q3D simulation results and experimental results. It is shown that this method has high practicality and accuracy in calculating the stray inductance of high-power converter laminated busbars, which can provide useful support for the application research of SiC MOSFETs and the layout design of laminated busbars.
刘博, 刘伟志, 董侃, 马强, 刁利军. 基于全碳化硅功率组件的变流器母排杂散电感解析计算方法[J]. 电工技术学报, 2021, 36(10): 2105-2114.
Liu Bo, Liu Weizhi, Dong Kan, Ma Qiang, Diao Lijun. Analytical Calculation Method for Stray Inductance of Converter Busbar Based on Full Silicon Carbide Power Module. Transactions of China Electrotechnical Society, 2021, 36(10): 2105-2114.
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2021, Vol. 36 
