基于全碳化硅功率组件的变流器母排杂散电感解析计算方法

doi:10.19595/j.cnki.1000-6753.tces.L90080

摘要
图/表
参考文献
相关文章 (15)

全文: PDF (2718 KB) HTML
输出: BibTeX | EndNote (RIS)

摘要碳化硅（SiC）器件的高开关速度使得其对杂散参数更为敏感,容易激发高频振荡和超调。因此需要对功率回路杂散电感进行准确计算,其中以母排电感最为关键。该文首先对现有母排电感计算方法分析比较,并提出一种考虑趋肤效应影响的母排电感计算方法;在此基础上,结合有限元仿真定量分析空间几何参数、器件布局和母排开孔等因素对母排电感的影响,并通过最小二乘逼近得到多异结构母排电感解析计算公式。最后,使用该方法计算1 200V/423A SiC MOSFET测试平台的母排电感,并分别与Ansys Q3D仿真提取结果和实验测试结果对比,结果表明,该方法计算大功率变流器叠层母排杂散电感具有较高的实用性和准确性,可为SiC MOSFET的应用研究和叠层母排的布局设计提供有益支撑。

	服务

	把本文推荐给朋友
	加入我的书架
	加入引用管理器
	E-mail Alert
	RSS
	作者相关文章
	刘博
	刘伟志
	董侃
	马强
	刁利军

关键词 ：叠层母排, 杂散电感, 解析计算, 双脉冲测试

Abstract：The high switching speed of silicon carbide (SiC) devices makes them more sensitive to stray parameters and easily excites high-frequency oscillations and overshoot. Therefore, it is necessary to accurately calculate the stray inductance of the power circuit, and the busbar inductance is the most critical. This paper first analyzes and compares existing busbar models, and proposes a calculation method of busbar inductance that takes into account the skin effect. On this basis, based on finite element simulation, the influence of spatial geometric parameters, device layout and busbar openings on the busbar inductance is quantitatively analyzed. Moreover, through the least squares approximation, the analytical calculation formula for the inductance of the busbar with multiple different structures is obtained. Finally, this method is used to calculate the bus inductance of the 1 200V/423A SiC MOSFET test platform, and the results are compared with Ansys Q3D simulation results and experimental results. It is shown that this method has high practicality and accuracy in calculating the stray inductance of high-power converter laminated busbars, which can provide useful support for the application research of SiC MOSFETs and the layout design of laminated busbars.

Key words： Laminated busbars stray inductance analytical calculation double-pulse-test

收稿日期: 2020-06-20

PACS:

TM46

基金资助:国家重点研发计划项目（2020YFF0304103）和北京市科委项目（Z181100004418005）资助

通讯作者: 刁利军,男,1980年生,教授,博士生导师,研究方向为电力电子在轨道交通方向的应用。E-mail:ljdiao@bjtu.edu.cn

作者简介: 刘博,男,1996年生,硕士,研究方向为新型电力电子器件应用。E-mail:18121460@bjtu.edu.cn

引用本文:

刘博, 刘伟志, 董侃, 马强, 刁利军. 基于全碳化硅功率组件的变流器母排杂散电感解析计算方法[J]. 电工技术学报, 2021, 36(10): 2105-2114. Liu Bo, Liu Weizhi, Dong Kan, Ma Qiang, Diao Lijun. Analytical Calculation Method for Stray Inductance of Converter Busbar Based on Full Silicon Carbide Power Module. Transactions of China Electrotechnical Society, 2021, 36(10): 2105-2114.

链接本文:

https://dgjsxb.ces-transaction.com/CN/10.19595/j.cnki.1000-6753.tces.L90080 https://dgjsxb.ces-transaction.com/CN/Y2021/V36/I10/2105

[1] Millan J, Godignon P, Perpina X, et al.A survey of wide bandgap power semiconductor devices[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2155-2163.
[2] Yin Shaobo, Xia Jinhui, Zhao Zhen, et al.Fast restarting of free-running induction motors under speed-sensorless vector control[J]. IEEE Transactions on Industrial Electronics, 2020, 67(7): 6124-6134.
[3] Diao Lijun, Du Huiqing, Shu Zhan, et al.A comparative study between AI-HM and SPD-HM for railway auxiliary inverter with pulsating DC link[J]. IEEE Transactions on Industrial Electronics, 2017, 65(7): 5816-5825.
[4] 张建忠, 吴海富, 张雅倩, 等. 一种SiC MOSFET谐振门极驱动电路[J]. 电工技术学报, 2020, 35(16): 3453-3459.
Zhang Jianzhong, Wu Haifu, Zhang Yaqian, et al.A resonant gate driver for SiC MOSFET[J]. Transa- ctions of China Electrotechnical Society, 2020, 35(16): 3453-3459.
[5] 王莉娜, 马浩博, 袁恺, 等. SiC MOSFET半桥电路开关瞬态过电流、过电压建模与影响因素分析[J]. 电工技术学报, 2020, 35(17): 3652-3665.
Wang Lina, Ma Haobo, Yuan Kai, et al.Modeling and analysis of influencing factors of transient over- current and overvoltage in SiC MOSFET half-bridge circuit switches[J]. Transactions of China Electrotechnical Society, 2020, 35(17): 3652-3665.
[6] 朱义诚, 赵争鸣, 王旭东, 等. SiC MOSFET与SiC SBD换流单元瞬态模型[J]. 电工技术学报, 2017, 32(12): 58-69.
Zhu Yicheng, Zhao Zhengming, Wang Xudong, et al.Transient model of switching unit between SiC MOSFET and SiC SBD[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 58-69.
[7] Sakairi H, Yanagi T, Otake H, et al.Measurement methodology for accurate modeling of SiC MOSFET switching behavior over wide voltage and current ranges[J]. IEEE Transactions on Power Electronics, 2018, 33(9): 7314-7325.
[8] 江师齐, 刘艺涛, 银杉, 等. 基于噪声源阻抗提取的单相逆变器电磁干扰滤波器的设计[J]. 电工技术学报, 2019, 34(17): 3552-3562.
Jiang Shiqi, Liu Yitao, Yin Shan, et al.Design of electromagnetic interference filter for single-phase inverter based on noise source impedance extra- ction[J]. Transactions of China Electrotechnical Society, 2019, 34(17): 3552-3562.
[9] 谢佳季, 游小杰, 郭希铮, 等. 基于SiC MOSFET的辅助变流器应用研究[J]. 电源学报, 2017, 15(2): 67-76.
Xie Jiaji, You Xiaojie, Guo Xizheng, et al.Appli- cation of auxiliary converter based on SiC MOSFET[J]. Journal of Power Supply, 2017, 15(2): 67-76.
[10] Shi Yuliang, Xie Ren, Wang Lu, et al.Switching characterization and short-circuit protection of 1200V SiC MOSFET T-type module in PV inverter appli- cation[J]. IEEE Transactions on Industrial Electronics, 2017, 64(11): 9135-9143.
[11] 金祝锋, 李威辰, 胡斯登, 等. 大容量电力电子装置中母排杂散电感提取方法的优化研究[J]. 电工技术学报, 2017, 32(14): 1-7.
Jin Zhufeng, Li Weichen, Hu Sideng, et al.Optimi- zation study of bus bar stray inductance extraction method in large-capacity power electronic devices[J]. Transactions of China Electrotechnical Society, 2017, 32(14): 1-7.
[12] Reigosa P D, Iannuzzo F, Luo H, et al.A short-circuit safe operation area identification criterion for SiC MOSFET power modules[J]. IEEE Transactions on Industry Applications, 2017, 53(3): 2880-2887.
[13] Hazra S, Madhusoodhanan S, Moghaddam G K, et al.Design considerations and performance evaluation of 1200V 100A SiC MOSFET-based two-level voltage source converter[J]. IEEE Transactions on Industry Applications, 2016, 52(5): 4257-4268.
[14] 刘欣, 王利桐, 梁贵书, 等. 压装组件中圆柱形母线的部分电感计算方法[J]. 电工技术学报, 2020, 35(增刊1): 1-9.
Liu Xin, Wang Litong, Liang Guishu, et al.Com- puting method for partial inductance of cylindrical busbar conductor[J]. Transactions of China Electro- technical Society, 2020, 35(S1): 1-9.
[15] Ruehli, Albert E, Antonini, et al. Skin-effect loss models for time- and frequency-domain PEEC Solver[J]. Proceedings of the IEEE, 2013, 101(2): 451-472.
[16] 阮杰, 刘畅, 李广卓, 等. 适用于器件并联型ANPC拓扑的低感叠层母排设计方法[J]. 高电压技术, 2019, 45(7): 2093-2100.
Ruan Jie, Liu Chang, Li Guangzhuo, et al.A low inductance laminated bus design method for device parallel ANPC topology[J]. High Voltage Engineering, 2019, 45(7): 2093-2100.
[17] Caponet M C, Profumo F, De Doncker R W, et al. Low stray inductance bus bar design and construction for good EMC performance in power electronic circuits[J]. IEEE Transactions on Power Electronics, 2000, 17(2): 225-231.
[18] 刘峰, 马伯乐, 杨光. 大功率变流器模块主电路杂散电感分析[J]. 机车电传动, 2013, 1(6): 15-19.
Liu Feng, Ma Bole, Yang Guang.Stray inductance analysis of main circuit of high-power converter module[J]. Locomotive Electric Drive, 2013, 1(6): 15-19.
[19] 朱俊杰, 原景鑫, 聂子玲, 等. 基于全碳化硅功率组件的叠层母排优化设计研究[J]. 中国电机工程学报, 2019, 39(21): 6383-6393.
Zhu Junjie, Yuan Jingxin, Nie Ziling, et al.Research on optimal design of laminated busbars based on full silicon carbide power modules[J]. Proceedings of the CSEE, 2019, 39(21): 6383-6393.