Coupled Over-Voltage Analysis and Decoupling Method of IGBT on the One Laminated Bus-Bar Based on Back to Back Three-Level Converter
Geng Chengfei1, Yang Bo2, Wu Xiang1, Tan Guojun1, Zhang Minghua1
1. School of Electrical and Power Engineering China University of Mining and Technology Xuzhou 221116 China; 2. School of Mechanical Electronic and Information Engineering China University of Mining and Technology (Beijing) Beijing 100083 China
Abstract:Back-to-back three-level converters are widely used in medium voltage AC drive applications. It has only one process of commutation at one point for one three-level inverter. When the IGBT of three-level rectifier side and the inverter side are placed on the one laminated bus-bar, there will be a certain electromagnetic coupling effect to the IGBT, which is caused by the irrelevance of the control method between them. In this paper, a laminated bus-bar of the back-to-back three-level converter with coupling effect was taken as the research object. Firstly, the equivalent circuit of the bus-bar was established by the partial element equivalent circuit (PEEC) method. Then, the transient electromagnetic coupling problem of the IGBTs between rectifier and inverter was analyzed innovatively, and the transient coupled over-voltage function was established. Furthermore, the IGBT pulse timing decoupling method was given for the coupling circuit loops that have the risk of over-voltage. Finally, the correctness of the analysis was verified by the experiment, which is instructive for the laminated bus-bar design of multi-inverters and reliable operation of IGBT.
耿程飞, 杨波, 吴翔, 谭国俊, 张明华. 背靠背三电平变流器IGBT共叠层母线过电压耦合分析及解耦方法[J]. 电工技术学报, 2020, 35(zk2): 440-449.
Geng Chengfei, Yang Bo, Wu Xiang, Tan Guojun, Zhang Minghua. Coupled Over-Voltage Analysis and Decoupling Method of IGBT on the One Laminated Bus-Bar Based on Back to Back Three-Level Converter. Transactions of China Electrotechnical Society, 2020, 35(zk2): 440-449.
[1] 赵争鸣, 贺凡波, 袁立强, 等. 大容量电力电子系统电磁瞬态分析技术及应用[J]. 中国电机工程学报, 2014, 34(18): 3013-3019. Zhao Zhengming, He Fanbo, Yuan Liqiang, et al.Techniques and applications of electromagnetic transient analysis in high power electronic systems[J]. Proceedings of the CSEE, 2014, 34(18): 3013-3019. [2] 唐新灵, 崔翔, 赵志斌, 等. 并联IGBT 芯片的等离子体抽取渡越时间振荡机理及其特性分析[J]. 电工技术学报, 2018, 33(10): 2354-2364. Tang Xinling, Cui Xiang, Zhao Zhibin, et al.Mechanism and characteristics of plasma extraction transit time oscillation of paralleled IGBT chips[J]. Transactions of China Electrotechnical Society, 2018, 33(10): 2354-2364. [3] 易荣, 赵争鸣. 受杂散电感影响的大容量变换器中 IGCT关断特性研究[J]. 中国电机工程学报, 2007, 27(31): 115-120. Yi Rong, Zhao Zhengming.Research on the turn-off characteristic of IGCT influenced by the stray inductance in high power inverters[J]. Proceedings of the CSEE, 2007, 27(31): 115-120. [4] 胡亮灯, 肖明恺, 楼徐杰. 中高压大功率 IGBT 数字有源门极开环分级驱动技术[J]. 电工技术学报, 2018, 33(10): 2365-2375. Hu Liangdeng, Xiao Mingkai, Lou Xujie.Open-loop hierarchical control technology of high-power IGBT digital active gate drive[J]. Transactions of China Electrotechnical Society, 2018, 33(10): 2365-2375. [5] 罗皓泽, 李武华, 何湘宁. 高压P-i-N二极管关断瞬态综合失效机理分析[J]. 电工技术学报, 2016, 31(20): 161-169. Luo Haoze, Li Wuhua, He Xiangning.Comprehensive failure mechanisms in high voltage P-i-N diode during turn-off transient[J]. Transactions of China Electrotechnical Society, 2016, 31(20): 161-169. [6] 陈材, 裴雪军, 陈宇, 等. 基于开关瞬态过程分析的大容量变换器杂散参数抽取方法[J]. 中国电机工程学报, 2011, 31(21): 40-47. Chen Cai, Pei Xuejun, Chen Yu, et al.A stray parameter extraction method for high power converters based on turn-on/off transient analysis[J]. Proceedings of the CSEE, 2011, 31(21): 40-47. [7] 李辉, 胡玉, 王坤, 等. 考虑杂散电感影响的风电变流器 IGBT 功率模块动态结温计算及热分布[J]. 电工技术学报, 2019, 34(20): 4242-4250. Li hui, Hu Yu, Wang Kun, et al. Thermal distribution and dynamic junction temperature calculation of IGBT power modules for wind turbine converters considering the influence of stray inductances[J]. Transactions of China Electrotechnical Society, 2019, 34(20): 4242-4250. [8] Zhang Ning, Wang Shuo, Zhao Hui.Develop parasitic inductance model for the planar bus-bar of an IGBT H bridge in a power inverter[J]. IEEE Transactions on Power Electronics, 2015, 30(12): 6924-6933. [9] Callegaro A D, Guo Jing, Eull M, et al.Bus bar design for high power invertersr[J]. IEEE Transactions on Power Electronics, 2018, 33(3): 2354-2367. [10] Aponet M C, Profumo F, De Doncker R W, et al. Low stray inductance bus bar design and construction for good EMC performance in power electronic circuit[J]. IEEE Transactions on Power Electronics, 2002, 17(2): 225-231. [11] Chen Cai, Pei Xuejun, Chen Yu, et al.Investigation, evaluation, and optimization of stray inductance in laminated busbar[J]. IEEE Transactions on Power Electronics, 2014, 29(7): 3679-3693. [12] 易荣, 赵争鸣, 袁立强. 高压大容量变换器中母线的优化设计[J]. 电工技术学报, 2008, 23(8): 94-98. Yi Rong, Zhao Zhengming, Yuan LiQiang. Busbar optimization design for high power converters[J]. Transactions of China Electrotechnical Society, 2008, 23(8): 94-98. [13] 孟庆云, 马伟明, 孙驰, 等. 双脉冲测试方法在中点钳位三电平逆变器中的应用研究[J]. 电工技术学报, 2011, 26(8): 131-138. Meng Qingyun, Ma Weiming, Sun Chi, et al.Research on dynamic voltage unbalance of inner and outer switch in NPC three level circuit test[J]. Transactions of China Electrotechnical Society, 2011, 26(8): 131-138. [14] 杨国润, 肖飞, 范学鑫, 等. 一种四管动作的高压大功率三电平变流器双脉冲测试方法[J]. 中国电机工程学报, 2015, 35(3): 695-701. Yang Guorun, Xiao Fei, Fan Xuexin, et al.A novel four-switch action double-pulse test method for high voltage high power three level converters[J]. Proceedings of the CSEE, 2015, 35(3): 695-701. [15] 汪鋆, 杨兵建, 徐枝新, 等. 750 kVA高功率密度二极管钳位型三电平通用变流模块的低感叠层母线排设计[J]. 中国电机工程学报, 2010, 30(18): 47-54. Wang Jun, Yang Bingjian, Xu Zhixin, et al.Configuration of low inductive laminated bus bar in 750kVA NPC three-level universal converter module of high power density[J]. Proceedings of the CSEE, 2010, 30(18): 47-54.