电工技术学报  2018, Vol. 33 Issue (21): 4919-4918    DOI: 10.19595/j.cnki.1000-6753.tces.180761
电工理论 |
碳化硅MOSFET换流回路杂散电感提取方法的优化
谢宗奎, 柯俊吉, 赵志斌, 黄华震, 崔翔
新能源电力系统国家重点实验室(华北电力大学) 北京 102206
Optimized Extraction Method of Stray Inductance in Commutation Path for Silicon Carbide MOSFET
Xie Zongkui, Ke Junji, Zhao Zhibin, Huang Huazhen, Cui Xiang
State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China
全文: PDF (19357 KB)  
输出: BibTeX | EndNote (RIS)      
摘要 在基于碳化硅(SiC)MOSFET器件的高压高频变换器中,快速的开关瞬态电流变化率di/dt会作用于换流回路杂散电感上,导致SiC MOSFET器件承受较大的电气应力,增加系统电磁干扰。因此,换流回路杂散电感的准确提取对于分析器件的开关特性非常关键。所以,该文提出了基于开关振荡频率的换流回路杂散电感提取方法,该方法具有不受杂散电阻、测量延时和平台尺寸的限制等优点。最后将该方法与现有的不同杂散电感提取方法进行了对比,验证了其有效性。
服务
把本文推荐给朋友
加入我的书架
加入引用管理器
E-mail Alert
RSS
作者相关文章
谢宗奎
柯俊吉
赵志斌
黄华震
崔翔
关键词 碳化硅MOSFET换流回路杂散电感开关振荡频率    
Abstract:In high-voltage and high-frequency converters based on silicon carbide (SiC) MOSFET devices, the rapid changing rate of the switching transient current, di/dt, coupling with the stray inductance in commutation path, will cause the large electric stress and increase electromagnetic interference. The accurate extraction of the stray inductance of the commutating path is significant for analyzing the switching characteristics of the device. Thus,the stray inductance extraction method of commutation path based on the switching oscillation frequency is proposed. This method has some advantages of being independent from the influence of stray resistance, measurement delay, and platform size. Finally, the proposed method is compared to various existing methods for extracting stray inductances, and its accuracy is verified.
Key wordsSilicon carbide    MOSFET    commutation path    stray inductance    switching oscillation frequency   
收稿日期: 2018-05-03      出版日期: 2018-11-12
PACS: TM85  
基金资助:国家重点研发计划资助项目(2016YFB0400503)
作者简介: 谢宗奎 男,1994年生,硕士研究生,研究方向为高压大功率SiC MOSFET封装及其开关特性测试。E-mail:xiezongkui1994@163.com;赵志斌 男,1977年生,教授,硕士生导师,研究方向为电磁场数值计算及高压大功率电力电子器件电磁兼容。E-mail:zhibinzhao@126.com(通信作者)
引用本文:   
谢宗奎, 柯俊吉, 赵志斌, 黄华震, 崔翔. 碳化硅MOSFET换流回路杂散电感提取方法的优化[J]. 电工技术学报, 2018, 33(21): 4919-4918. Xie Zongkui, Ke Junji, Zhao Zhibin, Huang Huazhen, Cui Xiang. Optimized Extraction Method of Stray Inductance in Commutation Path for Silicon Carbide MOSFET. Transactions of China Electrotechnical Society, 2018, 33(21): 4919-4918.
链接本文:  
https://dgjsxb.ces-transaction.com/CN/10.19595/j.cnki.1000-6753.tces.180761          https://dgjsxb.ces-transaction.com/CN/Y2018/V33/I21/4919