电工技术学报  2022, Vol. 37 Issue (19): 4911-4922    DOI: 10.19595/j.cnki.1000-6753.tces.212033
电力电子 |
6.5kV SiC MOSFET 模块加权优化设计与实验研究
尚海, 梁琳, 王以建, 杨英杰
强电磁工程与新技术国家重点实验室(华中科技大学电气与电子工程学院) 武汉 430074
Weighted Optimization Design and Experimental Study of 6.5kV SiC MOSFET Module
Shang Hai, Liang Lin, Wang Yijian, Yang Yingjie
State Key Laboratory of Advanced Electromagnetic Engineering and Technology School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China
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摘要 针对高压SiC模块的封装关键问题(即绝缘性能、寄生参数、热管理),该文提出多目标加权优化方法,实现6.5kV SiC MOSFET模块多个性能指标的折中和优化。首先,通过建立电、热、力多物理场有限元模型分别对量化指标寄生电容、焊料层热应力以及电场强度进行建模,并对三者进行加权优化,得到最优尺寸参数以保证6.5kV SiC MOSFET模块的整体性能;然后,通过对外壳和端子的设计,保证模块外部绝缘可靠的同时尽可能降低寄生电感,实现模块寄生电感和外部绝缘性能的折中;最后,通过双脉冲实验、耐压测试等验证所研制模块的性能优势及多目标加权优化方法的有效性。结果表明,所提研制模块能够在4 500V/14A的条件下可靠工作;在寄生参数、绝缘性能得到优化的同时,保证了模块整体性能的优越性。
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关键词 高压SiC MOSFET封装多物理场多目标加权优化    
Abstract:Aiming at the key problems of high voltage SiC module packaging (i.e. insulation performance, parasitic parameters, thermal management), a multi-objective weighted optimization method was proposed in this paper to achieve the trade-off and optimization of multiple performance indexes of 6.5kV SiC MOSFET module. First, the parasitic capacitance, thermal stress of the solder layer and electric field strength were modeled respectively by establishing multi-physics finite element models. The three indexes were weighted and optimized to obtain the optimal dimensional parameters to ensure the overall performance of the 6.5kV SiC MOSFET module. Through the design of the housing and terminals, the parasitic inductance was reduced as much as possible while keeping the external insulation of the module reliable. The parasitic inductance and insulation performance of the module were compromised. Finally, the performance advantages of the developed module and the effectiveness of the multi-objective weighted optimization method were verified through the double pulse test and high potential test. The results show that the developed module can work reliably under the condition of 4 500V/14A. The superiority of the overall performance of the module is guaranteed, while the parasitic parameters and the insulation performance are optimized.
Key wordsHigh voltage SiC MOSFET    packaging    multi-physics field    multi-objective weighted optimization   
收稿日期: 2021-12-14     
PACS: TN305.94  
基金资助:国家重点研发计划资助项目(2018YFB0905700)
通讯作者: 梁 琳 女,1981年生,研究员,博士生导师,研究方向为功率半导体器件及其应用。E-mail: lianglin@hust.edu.cn   
作者简介: 尚 海 男,1997年生,硕士研究生,研究方向为功率半导体器件封装技术。E-mail: 18833213508@163.com
引用本文:   
尚海, 梁琳, 王以建, 杨英杰. 6.5kV SiC MOSFET 模块加权优化设计与实验研究[J]. 电工技术学报, 2022, 37(19): 4911-4922. Shang Hai, Liang Lin, Wang Yijian, Yang Yingjie. Weighted Optimization Design and Experimental Study of 6.5kV SiC MOSFET Module. Transactions of China Electrotechnical Society, 2022, 37(19): 4911-4922.
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