Abstract：Compared with the Si counterpart, the SiC power device performs higher current density, junction-case thermal resistance and junction temperature, smaller footprint size, active bonding area and parallel bonding wires. Therefore, the electro-thermal stress of the bonding wire increases dramatically, which challenges the safety and reliability of the SiC power module. The ampacity of bonding wire of the next-generation power packaging is urgently pursued. From the aspects of current density and junction temperature, the obstacles of bonding wire for SiC power module packaging are clarified. Taking the continuous or pulsed load current into account, insightful mathematical models are established to characterize the ampacity of single and parallel bonding wires. By using bonding wires with different diameters, the simulated and experimental results are presented to ensure the effectiveness and validation of the proposed models. The ampacity degradation effect of parallel bonding wires is modeled and examined. This paper can provide guidance for the optimal design of bonding wire for the SiC power module.
艾盛祥, 曾正, 王亮, 孙鹏, 张嘉伟. 功率模块封装键合线的通流能力：模型与实证[J]. 电工技术学报, 2022, 37(20): 5227-5240.
Ai Shengxiang, Zeng Zheng, Wang Liang, Sun Peng, Zhang Jiawei. Ampacity of Bonding Wire for Power Module Packaging: Model and Experiment. Transactions of China Electrotechnical Society, 2022, 37(20): 5227-5240.
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