电工技术学报  2023, Vol. 38 Issue (16): 4286-4300    DOI: 10.19595/j.cnki.1000-6753.tces.221116
电力电子 |
基于变电阻驱动的SiC器件开关轨迹协同调控
邹铭锐, 曾正, 孙鹏, 王亮, 王宇雷
输配电装备及系统安全与新技术国家重点实验室(重庆大学) 重庆 400044
Coordinated Switching Trajectory Regulation of SiC Device Using Variable Resistance Gate Driver
Zou Mingrui, Zeng Zheng, Sun Peng, Wang Liang, Wang Yulei
State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University Chongqing 400044 China
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摘要 得益于优异的电-热性能,SiC器件在新能源变流器中得到了越来越多的应用。然而,相对于Si器件,SiC器件的开关速度更快、安全裕度更低、电磁干扰更大,制约了其安全可靠运行。基于栅极驱动电阻的动态切换,该文提出一种四阶段变电阻的SiC MOSFET器件开关轨迹调控方法,实现开关速度、损耗、过冲、振荡、串扰、延迟等多项性能的协同优化,建立驱动电阻对SiC器件开关轨迹定量调控的数学模型,发现开关性能量化指标与开关轨迹不同阶段之间的解耦规律,提出分阶段变电阻的驱动方法,实现开关轨迹中多个控制目标之间的协同优化,给出驱动电阻取值的通用设计方法,提出驱动电阻切换的交错时序逻辑,对比传统驱动方法,采用大量实验结果,验证了所提模型方法的有效性。
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关键词 SiC MOSFET器件主动栅极驱动四阶段变电阻开关轨迹调控多目标协同    
Abstract:Compared to Si counterparts, the faster switching speed of the SiC device brings lower switching losses. However, the higher dv/dt and di/dt also make it suffer from serious switching issues such as overshoot, oscillation, and crosstalk, which greatly limits the electro-thermal margin of the SiC device. Therefore, the switching trajectory of the SiC device needs to be optimized to achieve the coordinated optimization of switching losses and EMI. Besides, the parameters of the conventional gate driver (CGD) and snubber circuit are fixed, which fails to simultaneously manage all switching issues. The active gate driver (AGD) can regulate the switching trajectory. However, existing methods generally optimize a single switching parameter, unable to achieve overall improvement and coordination of the switching performance. Thus, this paper models the characteristic parameters of switching trajectories in stages and proposes a stage-by-stage coordinated optimization strategy. In addition, a four-stage variable resistance AGD is implemented to realize the coordinated optimization of each characteristic parameter.
Firstly, to evaluate the switching trajectory of the SiC device, six sets of key switching trajectory characteristic parameters, including switching loss, overshoot, oscillation, crosstalk, slew rates of voltage and current, and switching delay, are employed to reveal the regulation of the gate resistance on the switching trajectory. Secondly, based on the four-stage switching model of the SiC device and the regulation rule of the gate resistance, the optimal gate resistance of each stage is quantitatively designed with the constraint of the damping ratio of the gate loop. Thirdly, a four-stage variable resistance AGD circuit with timing control logic based on the Gray code is proposed to switch the gate resistance in each stage, thus realizing the regulation of switching trajectory. Finally, three groups of typical CGDs are adopted as control groups. According to the comparative experimental results, it is proved that the proposed method and the AGD circuit are competent in realizing the coordinated optimization of multiple characteristic parameters of the switching trajectory of the SiC device.
The comparative experiments under different bus voltages and different load currents present that the CGD1 with smaller resistance brings the most severe switching oscillation and crosstalk, along with the largest switching overshoot; The CGD2 with a larger resistance produces the largest switching delay and switching losses, alongside the slowest switching speed; The CGD3 designed with the optimal damping ratio of the gate loop is a trade-off between CGD1 and CGD2. Compared with CGD1, the switching overshoot and crosstalk are slightly reduced. However, the switching loss and switching delay are significantly increased. It can be seen that the optimization under the CGD with fixed gate resistance will inevitably deteriorate the performance of other characteristic parameters while improving one. On the contrary, the proposed AGD presents the shortest switching delay and the fastest switching speed as CGD1, while ensuring the similar suppression effect of switching overshoot, oscillation, and crosstalk as CGD2. In addition, the coordinated optimization of multiple characteristic parameters of the switching trajectory of the SiC device is implemented.
The following conclusions can be drawn from this paper: (1) The switching trajectory of the SiC device is observable and controllable. (2) The characteristic parameters of the switching trajectory can be regulated in stages to achieve coordinated optimization. (3) The proposed four-stage variable resistance co-optimization method and the AGD circuit can realize the coordinated regulation of multiple characteristic parameters of the switching trajectory, which can effectively suppress the oscillation, overshoot, and crosstalk of the SiC device while ensuring the faster switching speed and lower switching loss.
Key wordsSiC MOSFET device    active gate driver    four-phase varied gate resistance    switching trajectory regulation    multi-objective coordination   
收稿日期: 2022-06-14     
PACS: TM464  
基金资助:国家自然科学基金项目(52177169)、重庆市基础研究与前沿探索项目(cstc2021zdyjA0035)和重庆市研究生科研创新项目(CYS22023)资助
通讯作者: 曾正, 男,1986年生,博士,教授,研究方向为新型电力电子器件封装集成与应用。E-mail: zengerzheng@126.com   
作者简介: 邹铭锐, 男,1996年生,博士研究生,研究方向为新型电力电子器件封装集成与应用。E-mail: 928154685@qq.com
引用本文:   
邹铭锐, 曾正, 孙鹏, 王亮, 王宇雷. 基于变电阻驱动的SiC器件开关轨迹协同调控[J]. 电工技术学报, 2023, 38(16): 4286-4300. Zou Mingrui, Zeng Zheng, Sun Peng, Wang Liang, Wang Yulei. Coordinated Switching Trajectory Regulation of SiC Device Using Variable Resistance Gate Driver. Transactions of China Electrotechnical Society, 2023, 38(16): 4286-4300.
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