电工技术学报  2022, Vol. 37 Issue (10): 2549-2558    DOI: 10.19595/j.cnki.1000-6753.tces.201485
电力电子 |
基于MOSFET的串联谐振双有源桥死区振荡机理分析及抑制
胡钰杰1,2, 李子欣1,2, 赵聪1,2, 罗龙1,2, 李耀华1,2
1.中国科学院电力电子与电气驱动重点实验室(中国科学院电工研究所) 北京 100190;
2.中国科学院大学 北京 100049
Mechanism Analysis and Suppression of Oscillation in Dead Time of Series Resonant Dual Active Bridge Based on MOSFET
Hu Yujie1,2, Li Zixin1,2, Zhao Cong1,2, Luo Long1,2, Li Yaohua1,2
1. Key Laboratory of Power Electronics and Electric Drive Institute of Electrical Engineering Chinese Academy of Sciences Beijing 100190 China;
2. University of Chinese Academy of Sciences Beijing 100049 China
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摘要 基于MOSFET的串联谐振双有源桥(DAB)变换器可同时实现所有功率器件的零电压开通(ZVS)和零电流关断(ZCS),具有效率高的优点,被广泛应用于电力电子变压器(PET)隔离DC-DC环节。然而,在采用隔离变压器的DAB中,由于MOSFET寄生电容的存在,在死区时间内器件寄生电容与隔离变压器漏感会产生高频振荡,增加了通态损耗。该文建立死区时间内串联谐振DAB的等效电路,分析死区时间内高频振荡电流幅值与关断时刻电流的数学关系。为抑制高频振荡,提出基于开关频率微调的振荡抑制方法。实验结果表明了理论分析的正确性和高频振荡抑制方法的有效性。
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关键词 串联谐振双有源桥MOSFET寄生电容励磁电流死区高频振荡高频振荡抑制    
Abstract:The series resonant dual active bridge (DAB) converter based on MOSFET can realize zero voltage switching (ZVS) and zero current switching(ZCS) of all power devices at the same time. It has high efficiency and is widely used in isolated DC-DC stage of power electronics transformer (PET). However, in DAB with isolation transformer, due to the existence of parasitic capacitance of MOSFET, the parasitic capacitance and leakage inductance of isolation transformer will produce high frequency oscillation in the dead time, which will increase the conduction loss. In this paper, the equivalent circuit of series resonant DAB in dead time is established. The mathematical relationship between the amplitude of high frequency oscillation current and the current at turn off time is analyzed. In order to suppress high frequency oscillation, an oscillation suppression method based on switch frequency fine tuning is proposed. The experimental results show that the theoretical analysis is correct and the high frequency oscillation suppression method is effective.
Key wordsSeries resonant dual active bridge    parasitic capacitance of MOSFET    excitation current    dead-time high-frequency oscillation    high-frequency oscillation suppression   
收稿日期: 2020-11-06     
PACS: TM41  
  TM46  
基金资助:国家自然科学基金资助项目(52007180)
通讯作者: 李子欣 男,1981年生,研究员,IET Fellow,博士生导师,研究方向为电力电子技术在电力系统中的应用,包括电力电子变压器、高压直流输电换流器等。E-mail: lzx@mail.iee.ac.cn   
作者简介: 胡钰杰 男,1993年生,博士研究生,研究方向为电力电子技术在电力系统中的应用,主要为电力电子变压器。E-mail: huyj@mail.iee.ac.cn
引用本文:   
胡钰杰, 李子欣, 赵聪, 罗龙, 李耀华. 基于MOSFET的串联谐振双有源桥死区振荡机理分析及抑制[J]. 电工技术学报, 2022, 37(10): 2549-2558. Hu Yujie, Li Zixin, Zhao Cong, Luo Long, Li Yaohua. Mechanism Analysis and Suppression of Oscillation in Dead Time of Series Resonant Dual Active Bridge Based on MOSFET. Transactions of China Electrotechnical Society, 2022, 37(10): 2549-2558.
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https://dgjsxb.ces-transaction.com/CN/10.19595/j.cnki.1000-6753.tces.201485          https://dgjsxb.ces-transaction.com/CN/Y2022/V37/I10/2549