压接型IGBT器件单芯片子模组疲劳失效的仿真

doi:10.19595/j.cnki.1000-6753.tces.170875

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摘要

压接型绝缘栅双极型晶体管（IGBT）器件因其具有双面散热、失效短路和易于串联等优点特别适合应用于柔性直流输电等大功率领域。但这种压接封装结构的器件在经历长时间的循环热应力后,各组件中的金属材料会逐渐出现疲劳失效,对器件可靠性产生不利影响。建立压接型IGBT器件的单芯片子模组有限元仿真模型,利用功率循环仿真来模拟器件所经历的循环热应力工况,并对功率循环仿真结果进行热和力的分析。同时应用组合Coffin-Mason和Basquin模型对IGBT芯片进行疲劳寿命预测。结果表明芯片与发射极钼片相接触的边缘区域承受的压力最大也最易变形,且在高应力条件下芯片的疲劳寿命只有10 000多次循环。最后结合实际失效的芯片和仿真结果提出压接型IGBT器件一种“压力失效”模式,并对其相应的失效机理进行了一些初步解释。

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关键词 ：压接型IGBT器件, 单芯片子模组, 功率循环, 疲劳寿命预测, 芯片失效

Abstract：

Due to the advantages of double heat dissipation, short circuit failure and easy series connection, press-pack IGBTs (Insulated gate bipolar transistor) are particularly suitable for application in flexible HVDC high power field. However, after a long period of cyclic thermal stress, the fatigue failure occurs in the metal material of each component because of its pressure contact package structure, which adversely affects device reliability. In this paper, the finite element simulation model of Press-Pack IGBTs was established, the power cycling simulation was used to simulate the thermal stress condition of the working process, and the thermal-mechanical results were analyzed. The fatigue life prediction of IGBT chip was carried out using Coffin-Mason and Basquin model. The results show that the edge region of the chip surface that contacting the emitter molybdenum is the pressure and deformation concentration region, and the fatigue life of the chip is only 10 000 cycles in high stress condition. A pressure failure mode of Press-Pack IGBTs was proposed, and the failure mechanisms were preliminarily explained using the actual failure chips and simulation results.

Key words： Press-pack IGBTs single chip submodule power cycling fatigue life prediction chip failure

收稿日期: 2017-06-19 出版日期: 2018-09-26

PACS:

TN303

基金资助:

国家重点研发计划（2016YFB0901800）和国家电网公司科技项目（SGRI-GB-71-16-002、5455GB160006）资助

通讯作者: 邓二平男,1989年生,博士,主要从事电力系统用高压大功率IGBT器件封装技术及可靠性方面研究工作。E-mail: dengerpinghit@163.com

作者简介: 张经纬男,1992年生,硕士,主要从事电力系统用高压大功率压接型IGBT器件封装技术及可靠性方面研究工作。E-mail: jingwei-016@126.com

引用本文:

张经纬, 邓二平, 赵志斌, 李金元, 黄永章. 压接型IGBT器件单芯片子模组疲劳失效的仿真[J]. 电工技术学报, 2018, 33(18): 4277-4285. Zhang Jingwei, Deng Erping, Zhao Zhibin, Li Jinyuan, Huang Yongzhang. Simulation on Fatigue Failure of Single IGBT Chip Module of Press-Pack IGBTs. Transactions of China Electrotechnical Society, 2018, 33(18): 4277-4285.

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