老化实验条件下的IGBT寿命预测模型

摘要
图/表
参考文献
相关文章 (15)

全文: PDF (26810 KB)
输出: BibTeX | EndNote (RIS)

摘要以器件功率循环为基础,在疲劳损伤理论基础上建立功率器件寿命模型,以提高变流器的运行可靠性,为功率变流器的检修维护提供理论基础。给出了器件寿命预测模型的使用价值和意义,通过分析功率器件失效机理,设计了功率循环实验平台和老化实验方案,阐述了老化实验原理并给出了老化参数提取方法。利用Weibull分布建立了器件的一维寿命模型并分析了该模型的优缺点,提出了改进的器件三维寿命模型,通过对比、分析证明了该模型的准确性,得到的Arrhenius广延指数模型更能体现器件寿命分布。

	服务

	把本文推荐给朋友
	加入我的书架
	加入引用管理器
	E-mail Alert
	RSS
	作者相关文章
	赖伟
	陈民铀
	冉立
	王学梅
	徐盛友

关键词 ：寿命模型, 功率循环, Weibull分布, Arrhenius广延指数模型, IGBT

Abstract：According to the IGBT power cycling test, the power device lifetime models based on the device fatigue damage theory are established, to reduce the maintenance cost, enhance the inverter reliability and provide the theoretical support for the inverter maintenance. Firstly, the ageing experiment theory and the extracting parameters method of the power devices were provided. Secondly, according to device fatigue damage theory, power cycling test platform was established and two test plans were designed to obtain the failure parameters of power module. Finally, the one-dimensional lifetime model using Weibull distribution was established. The advantages and disadvantages of this model were analyzed. Compared with the experimental results, the three-dimensional stretched exponential lifetime model is promoted, which is more reasonable than Coffin-Manson and Arrhenius models.

Key words： Lifetime model, power cycling, Weibull distribution, Arrhenius stretched exponential model, IGBT

收稿日期: 2014-08-26 出版日期: 2017-01-03

PACS:

TM46

基金资助:国家自然科学基金（51477019）,国家“111”计划（B08036）,中央高校基本科研业务费（CDJZR12150074）和国家重点基础研究发展计划（973计划）（2012CB25200）资助项目

作者简介: 赖伟男,1986年生,博士,研究方向为电力电子器件可靠性和状态监测。E-mail: laiweicqu@126.com（通信作者）;陈民铀男,1954年生,教授,博士生导师,研究方向为在线监测与故障诊断。E-mail: mchencqu@126.com

引用本文:

赖伟, 陈民铀, 冉立, 王学梅, 徐盛友. 老化实验条件下的IGBT寿命预测模型[J]. 电工技术学报, 2016, 31(24): 173-180. Lai Wei, Chen Minyou, Ran Li, Wang Xuemei, Xu Shengyou. IGBT Lifetime Model Based on Aging Experiment. Transactions of China Electrotechnical Society, 2016, 31(24): 173-180.

链接本文:

https://dgjsxb.ces-transaction.com/CN/Y2016/V31/I24/173

[1] Wang H, Ma K, Blaabjerg F. Design for reliability of power electronic systems[C]//IECON 38th Annual Conference on IEEE Industrial Electronics Society, Montreal, QC, 2012: 33-44.
[2] Morozumi A, Yamada K, Miyasaka T, et al. Reliabi- lity of power cycling for IGBT power semiconductor modules[J]. IEEE Transactions on Industry Appli- cations, 2003, 39(3): 665-671.
[3] Ramminger S, Wachutka G. Predicting the crack progression in PbSnAg-solder under cyclic loading[C]// 4th International Conference on Integrated Power Systems (CIPS), VDE, Naples, Italy, 2006: 1-6.
[4] Mccluskey F P, Wang Z, Dash M, et al. Reliability of high temperature lead-free solder alternative[C]// IEEE Electronics Systemintegration Technology Conference, Dresden, 2006: 444-447.
[5] Wu W, Held M, Jacob P, et al. Thermal stress related packaging failure in power IGBT modules[C]// Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs, ISPSD'95, Yokohama, 1995: 330-334.
[6] 王彦刚, 武力, 崔雪青, 等. IGBT模块封装热应力研究[J]. 电力电子技术, 2000, 34(6): 52-54.
Wang Yangang, Wu Li, Cui Xueqing, et al. A study on packaging thermal stress of IGBT modules[J]. Power Electronics, 2000, 34(6): 52-54.
[7] 施建根, 孙伟锋, 景伟平, 等. 车载IGBT器件封装装片工艺中空洞的失效研究[J]. 电子与封装, 2010, 10(2): 23-27.
Shi Jiangen, Sun Weifeng, Jing Weiping, et al. Failure analysis of voids in automotive IGBT die attach process[J]. Electronics & Packaging, 2010, 10(2): 23-27.
[8] Ciappa M. Selected failure mechanisms of modern power modules[J]. Microelectronics Reliability, 2002, 42(4-5): 653-667.
[9] Held M, Jacob P, Nicoletti G, et al. Fast power cycling test of IGBT modules in traction appli- cation[C]//Proceedings of International Conference on Power Electronics and Drive Systems, 1997, 1: 425-430.
[10] Lu Z, Huang W, Stan M R, et al. Interconnect lifetime prediction for reliability-aware systems[J]. IEEE Transactions on Very Large Scale Integration Systems, 2007, 15(2): 159-172.
[11] Bryant A T, Mawby P A, Palmer P R, et al. Exploration of power device reliability using compact device models and fast electro-thermal simu- lation[C]//Conference Record of the 2006 IEEE Industry Applications Conference Forty-First IAS Annual Meeting, Tampa, FL, 2006, 3: 1465-1472.
[12] Smet V, Forest F, Huselstein J J, et al. Ageing and failure modes of IGBT modules in high-temperature power cycling[J]. IEEE Transactions on Industrial Electronics, 2011, 58(10): 4931-4941.
[13] 郑利兵, 韩立, 刘钧, 等. 基于三维热电耦合有限元模型的IGBT失效形式温度特性研究[J]. 电工技术学报, 2011, 26(7): 242-246.
Zheng Libing, Han Li, Liu Jun, et al. Investigation of the temperature character of IGBT failure mode based on 3D thermal-electro coupling FEM[J]. Transactions of China Electrotechnical Society, 2011, 26(7): 242-246.
[14] Chen M, Hu A, Yang X. Predicting IGBT junction temperature with thermal network component model[C]//Asia-Pacific Power & Energy Engineering Conference, IEEE Computer Society, Wuhan, 2011: 1-4.
[15] 何湘宁, 吴岩松, 罗皓泽, 等. 基于IGBT离线测试平台的功率逆变器损耗准在线建模方法[J]. 电工技术学报, 2014, 29(6): 1-6.
He Xiangning, Wu Yansong, Luo Haoze, et al. Quasi- online modeling method of the power inverter losses based on IGBT offline test platform[J]. Transactions of China Electrotechnical Society, 2014, 29(6): 1-6.
[16] 贾京, 冯士维, 邓兵, 等. 基于热阻测量的PCB散热特性[J]. 电工技术学报, 2014, 29(9): 239-244.
Jia Jing, Feng Shiwei, Deng Bing, et al. Transfer heat performance of PCB based on thermal resistance measurement[J]. Transactions of China Electro- technical Society, 2014, 29(9): 239-244.
[17] Gachovska T K, Tian B, Hudgins J, et al. A real-time thermal model for monitoring of power semi- conductor devices[J]. IEEE Transactions on Industry Applications, 2013, 51(4): 2208-2213.
[18] 刘宾礼, 刘德志, 唐勇, 等. 基于加速寿命试验的IGBT模块寿命预测和失效分析[J]. 江苏大学学报(自然科学版), 2013, 34(5): 556-563.
Liu Binli, Liu Dezhi, Tang Yong, et al. Lifetime prediction and failure analysis of IGBT module based on accelerated lifetime test[J]. Journal of Jiangsu University (Nature of Science Edition), 2013, 34(5): 556-563.
[19] 唐勇, 汪波, 陈明, 等. 高温下的IGBT可靠性与在线评估[J]. 电工技术学报, 2014, 29(6):17-23.
Tang Yong, Wang Bo, Chen Ming, et al. Reliability and on-line evaluation of IGBT modules under high temperature[J]. Transactions of China Electro- technical Society, 2014, 29(6): 17-23.
[20] Yang L, Agyakwa P A, Johnson C M. Physics- of-failure lifetime prediction models for wire bond interconnects in power electronic modules[J]. IEEE Transactions on Device & Materials Reliability, 2013, 13(1): 9-17.
[21] Bayerer R, Herrmann T, Licht T, et al. Model for power cycling lifetime of IGBT modules-various factors influencing lifetime[C]//2008 5th Inter- national Conference on Integrated Power Systems (CIPS), VDE, Nuremberg, Germany, 2008: 1-6.
[22] Zhang L, Zhao Y, Hou K. The research of levenberg-marquardt algorithm in curve fittings on multiple gpus[C]//2011 IEEE 10th International Conference on Trust, Security and Privacy in Com- puting and Communications (TrustCom), Changsha, 2011: 1355-1360.
[23] Ciappa M. Selected failure mechanisms of modern power modules[J]. Microelectronics Reliability, 2002, 42(4-5): 653-667.
[24] Hokanson K E, Bar-Cohen A. A shear-based optimi- zation of adhesive thickness for die bonding[J]. IEEE Transactions on Components Packaging & Manu- facturing Technology Part A, 1995, 18(3): 578-584.