电工技术学报  2022, Vol. 37 Issue (21): 5503-5512    DOI: 10.19595/j.cnki.1000-6753.tces.211249
电力电子 |
IGBT关断时刻的应力波测量优化及影响因素分析
耿学锋1, 何赟泽1, 王广鑫1, 刘松源1, 李运甲2
1.湖南大学电气与信息工程学院 长沙 410082;
2.电力设备电气绝缘国家重点实验室(西安交通大学) 西安 710049
Measurement Optimization and Analysis of Influencing Factors of IGBT's Turn-off Stress Wave
Geng Xuefeng1, He Yunze1, Wang Guangxin1, Liu Songyuan1, Li Yunjia2
1. College of Electrical and Information Engineering Hunan University Changsha 410082 China;
2. State Key Laboratory of Electrical Insulation for Power Equipment Xi'an Jiaotong University Xi'an 710049 China;
全文: PDF (11999 KB)   HTML
输出: BibTeX | EndNote (RIS)      
摘要 绝缘栅极双极型晶体管(IGBT)是电能变换的核心器件,其健康状态与系统的可靠运行直接相关。声发射(AE)是一种快速、无损、在线的检测方法,广泛应用于电力行业,在IGBT的状态评估中具有潜在的应用价值。已有的研究表明:IGBT在关断瞬间能够产生应力波(SW),且AE传感器能够对应力波信号进行测量,但在测量时容易受到周围电场的干扰。该文分析了普通AE传感器干扰信号产生的原因,提出基于差分式AE传感器的应力波测量方法,并从理论角度论证了差分式AE传感器的抗干扰机理。搭建试验平台,通过试验证明差分式AE传感器具有较好的抗电气干扰能力,能够对IGBT关断应力波进行有效地提取。进一步地,对不同关断电流条件下的IGBT进行应力波的测量和分析,发现关断电流与应力波的强度强相关,可为后续探索应力波产生机理及实现IGBT在线监测提供参考。
服务
把本文推荐给朋友
加入我的书架
加入引用管理器
E-mail Alert
RSS
作者相关文章
耿学锋
何赟泽
王广鑫
刘松源
李运甲
关键词 声发射IGBT关断应力波干扰抑制    
Abstract:Insulated gate bipolar transistor (IGBT) is the key component of power conversion, and its health state is directly related to the safe operation of the system. Acoustic emission (AE) is a fast, non-destructive and on-line detection method, which is widely used in power industry, and has potential application value in the condition evaluation of IGBT. It is reported that IGBT can generate the stress wave (SW) at the moment of turn-off, while AE sensors can measure SW signals. However, AE sensors are susceptible to interference from surrounding electric fields when measuring SW signals. In this paper, the causes of interference signals in AE sensors were analyzed, a method for measuring SW based on differential AE sensor was presented, and the anti-interference mechanism of differential AE sensor was demonstrated theoretically. The experimental results show that the differential AE sensor has good resistance to electrical interference and can extract the turn-off stress wave of IGBT effectively. Further, stress waves of IGBT under the condition of different turn-off current were extracted. It can be concluded that the turn-off current is strongly related to the strength of the SW, which can provide a reference for the exploration of the generation mechanism of stress waves and the realization of online monitoring of IGBT in the future.
Key wordsAcoustic emission    IGBT's turn-off    stress wave    interference suppression   
收稿日期: 2021-08-11     
PACS: TM930  
基金资助:国家自然科学基金面上项目(52077063)、长沙市科技计划项目(kq2004006)、湖南省科技创新计划项目科技人才专项(2018RS3039); 和电力设备电气绝缘国家重点实验室开放基金项目(EIPE20202)资助
通讯作者: 何赟泽 男,1983 年生,博士,教授,研究方向为故障检测与状态监测。E-mail:hejicker@163.com   
作者简介: 耿学锋 男,1998 年生,博士研究生,研究方向为电力电子装备的故障检测与状态监测。E-mail:gengxuefeng_hnu@163.com
引用本文:   
耿学锋, 何赟泽, 王广鑫, 刘松源, 李运甲. IGBT关断时刻的应力波测量优化及影响因素分析[J]. 电工技术学报, 2022, 37(21): 5503-5512. Geng Xuefeng, He Yunze, Wang Guangxin, Liu Songyuan, Li Yunjia. Measurement Optimization and Analysis of Influencing Factors of IGBT's Turn-off Stress Wave. Transactions of China Electrotechnical Society, 2022, 37(21): 5503-5512.
链接本文:  
https://dgjsxb.ces-transaction.com/CN/10.19595/j.cnki.1000-6753.tces.211249          https://dgjsxb.ces-transaction.com/CN/Y2022/V37/I21/5503