Abstract：Silicon carbide(SiC) semiconductor devices have received extensive attention with the better performance of the wide band gap material. It is necessary to compare with their silicon(Si) counterparts due to SiC semiconductor devices are new. In this paper, the static characteristics of SiC MOSFET, Si CoolMOS and IGBT are compared. Then, the test platform based on buck converter is constructed, the input voltage of which is 400V, the output current of which is 4~10A. Switching waveforms, switching times, dv/dt, di/dt and reverse recovery characteristic of internal diodes of three devices are tested. Finally, theoretical efficiencies and practical efficiencies of a 2kW dual active bridge (DAB) converter are compared.
梁美,郑琼林,可翀,李艳,游小杰. SiC MOSFET,Si CoolMOS和IGBT的特性对比及其在DAB变换器中的应用[J]. 电工技术学报, 2015, 30(12): 41-50.
Liang Mei,Trillion Q Zheng,Ke Chong,Li Yan,You Xiaojie. Performance Comparison of SiC MOSFET, Si CoolMOS and IGBT for DAB Converter. Transactions of China Electrotechnical Society, 2015, 30(12): 41-50.
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