SiC MOSFET串联短路动态特性

doi:10.19595/j.cnki.1000-6753.tces.201432

摘要
图/表
参考文献
相关文章 (12)

全文: PDF (4949 KB) HTML
输出: BibTeX | EndNote (RIS)

摘要

在电力电子系统中,因器件击穿、硬件电路缺陷或系统控制失误导致碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）误开通时,桥臂电流回路中多个器件处于开通状态,形成串联短路故障。该文以SiC MOSFET半桥电路为研究对象,详细介绍SiC MOSFET串联短路的动态过程,理论分析负载电流、栅极驱动电压和结温温升对SiC MOSFET短路动态特性的影响规律,推导出SiC MOSFET分压模型,并采用仿真模型进行验证。实验基于1 200V/80A SiC MOSFET测试平台验证电路参数对短路损耗和结温分布的影响。理论与实验结果表明,SiC MOSFET串联短路分压特性对电路参数具有较高敏感度,漏极电压与漏极电流不平衡动态变化会改变器件短路损耗,进而影响结温温升,造成串联短路SiC MOSFET不稳定变化。

	服务

	把本文推荐给朋友
	加入我的书架
	加入引用管理器
	E-mail Alert
	RSS
	作者相关文章
	张经纬
	张甜
	冯源
	宋明轩
	谭国俊

关键词 ： SiC MOSFET, 串联短路, 分压特性, 结温分布

Abstract：

In power electronic systems, when SiC MOSFET is turned on incorrectly due to breakdown devices, hardware circuit defects or system control errors, at least two devices work in the short-circuit current loop, forming series short-circuit faults. Based on the half-bridge structure, the switching principle of SiC MOSFETs in short-circuit was introduced in detail. To study the influence mechanism of load current, gate drive voltage and junction temperature, the short circuit test was carried out under different experimental situations. The drain-source voltage sharing model of SiC MOSFET was derived and verified by simulation. The changes of short-circuit loss and junction temperature distribution caused by circuit parameters were compared on the 1 200V/80A SiC MOSFET experimental bench. The results show that the dynamic characteristics of SiC MOSFET are highly sensitive to circuit parameters in series short-circuit. The unbalanced dynamic change of drain-source voltage and drain current affect the short-circuit loss of devices, which in turn changes the junction temperature distribution.

Key words： SiC MOSFET series short-circuit voltage dividing characteristic junction tem- perature distribution

收稿日期: 2020-11-01

PACS:

TM46

基金资助:

国家重点研发计划子课题资助项目（2016YFC0600804）

通讯作者: 谭国俊, 男,1962年生,教授,博士生导师,研究方向为电力电子与电力传动。E-mail: gjtan_cumt@163.com

作者简介: 张经纬,男,1991年生,博士研究生,研究方向为SiC器件特性分析与驱动设计。E-mail:tb19130011b4@cumt.edu.cn

引用本文:

张经纬, 张甜, 冯源, 宋明轩, 谭国俊. SiC MOSFET串联短路动态特性[J]. 电工技术学报, 2021, 36(12): 2446-2458. Zhang Jingwei, Zhang Tian, Feng Yuan, Song Mingxuan, Tan Guojun. Dynamic Characterization Assessment on Series Short-Circuit of SiC MOSFET. Transactions of China Electrotechnical Society, 2021, 36(12): 2446-2458.

链接本文:

https://dgjsxb.ces-transaction.com/CN/10.19595/j.cnki.1000-6753.tces.201432 https://dgjsxb.ces-transaction.com/CN/Y2021/V36/I12/2446

[1] 周林, 李寒江, 解宝, 等. SiC MOSFET的Saber建模及其在光伏并网逆变器中的应用和分析[J]. 电工技术学报, 2019, 34(20): 4251-4263.
Zhou Lin, Li Hanjiang, Xie Bao, et al.Saber modeling of SiC MOSFET and its application and analysis in photovoltaic grid-connected inverter[J]. Transactions of China Electrotechnical Society, 2019, 34(20): 4251-4263.
[2] She Xu, Huang A Q, Óscar L, et al.Review of silicon carbide power devices and their applications[J]. IEEE Transactions on Industrial Electronics, 2017, 64(10): 8193-8205.
[3] 盛况, 郭清, 张军明, 等.碳化硅电力电子器件在电力系统的应用展望[J]. 中国电机工程学报, 2012, 32(30): 1-7.
Sheng Kuang, Guo Qing, Zhang Junming, et al.Development and prospect of SiC power devices in power grid[J]. Proceedings of the CSEE, 2012, 32(30): 1-7.
[4] Laird I, Yuan Xibo, Scoltock J, et al.A design optimization tool for maximizing the power density of 3-phase DC-AC converters using silicon carbide (SiC) devices[J]. IEEE Transactions on Power Electronics, 2019, 33(4): 2913-2932.
[5] 庄桂元, 张兴, 刘威, 等. 带飞跨电容的三电平拓扑中SiC MOSFET过电压与过电流保护[J]. 电工技术学报, 2021, 36(2): 341-351.
Zhuang Guiyuan, Zhang Xing, Liu Wei, et al.Over- voltage and overcurrent protection of SiC MOSFET in three-level topology with flying capacitor[J]. Transa- ctions of China Electrotechnical Society, 2021, 36(2): 341-351.
[6] 陈杰, 邓二平, 赵子轩, 等. 不同老化试验方法下SiC MOSFET失效机理分析[J]. 电工技术学报, 2020, 35(24): 5105-5114.
Chen Jie, Deng Erping, Zhao Zixuan, et al.Failure mechanism analysis of SiC MOSFET under different aging test methods[J]. Transactions of China Electro- technical Society, 2020, 35(24): 5105-5114.
[7] 王莉娜, 马浩博, 袁恺, 等. SiC MOSFET半桥电路开关瞬态过电流、过电压建模与影响因素分析[J]. 电工技术学报, 2020, 35(17): 3652-3665.
Wang Lina, Ma Haobo, Yuan Kai, et al.Modeling and influencing factor analysis of SiC MOSFET half- bridge circuit switching transient overcurrent and overvoltage[J]. Transactions of China Electrotechnical Society, 2020, 35(17): 3652-3665.
[8] 李辉, 黄樟坚, 廖兴林, 等. 一种抑制SiC MOSFET桥臂串扰的改进门极驱动设计[J]. 电工技术学报, 2019, 34(2): 275-285.
Li Hui, Huang Zhangjian, Liao Xinglin, et al.An improved SiC MOSFET gate driver design for crosstalk suppression in a phase-leg configuration[J]. Transactions of China Electrotechnical Society, 2019, 34(2): 275-285.
[9] Zhou Xintian, Su Hongyuan, Wang Yan.Investiga- tions on the degradation of 1.2kV 4H-SiC MOSFETs under repetitive short-circuit tests[J]. IEEE Transa- ctions on Electronic Devices, 2016, 63(11): 4346-4351.
[10] Reigosa P D, Luo Haoze, Francesco I.Implications of ageing through power cycling on the short circuit robustness of 1.2kV SiC MOSFETs[J]. IEEE Transa- ctions on Power Electronics, 2019, 34(11): 11182-11190.
[11] Nguyen T, Ahmed A, Thang T V, et al.Gate oxide reliability issues of SiC MOSFETs under short-circuit operation[J]. IEEE Transactions on Power Electronics, 2015, 30(5): 2445-2455.
[12] Zhou Yuming, Liu Hangzhi, Mu Shilu, et al.Short- circuit failure model of SiC MOSFET including the interface trapped charges[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 90-98.
[13] Sun Jiahui, Wei Jin, Zheng Zheyang, et al.Short circuit capability and short sircuit induced v_th instabi- lity of a 1.2kV SiC power MOSFET[J]. IEEE Journal of Emerging and Selected Topics in Power Elec- tronics, 2019, 7(3): 1539-1546.
[14] Ji Shiqi, Marko L, Huang Xingxuan, et al.Short circuit characterization and protection of 10kV SiC MOSFET[J]. IEEE Transactions on Power Electronics, 2019, 34(2): 1755-1767.
[15] 吴海富, 张建忠, 赵进, 等. SiC MOSFET短路检测与保护研究综述[J]. 电工技术学报, 2019, 34(21): 4519-4528.
Wu Haifu, Zhang Jianzhong, Zhao Jin, et al.Review of short-circuit detection and protection of silicon carbide MOSFETs[J]. Transactions of China Electro- technical Society, 2019, 34(21): 4519-4528.
[16] 王占扩, 童朝南, 黄伟超. SiC MOSFET短路特性及过流保护研究[J]. 中国电机工程学报, 2020, 40(18): 5751-5760.
Wang Zhankuo, Tong Chaonan, Huang Weichao.Reasearch on short-circuit characteristics and over-
17 current protection of SiC MOSFET[J]. Proceedings of the CSEE, 2020, 40(18): 5751-5760.
[17] 高勇, 乔小可, 孟昭亮, 等. SiC MOSFET的短路特性[J]. 半导体技术, 2019, 44(5): 342-348.
Gao Yong, Qiao Xiaoke, Meng Zhaoliang, et al.Short-circuit characteristics of SiC MOSFETs[J]. Semiconductor Technology, 2019, 44(5): 342-348.
[18] Sadik D P, Colmenares J, Tolstoy G, et al.Short- circuit protection circuits for silicon-carbide power transistors[J]. IEEE Transactions on Industrial Elec- tronics, 2016, 63(4): 1995-2004.
[19] Wang Jun, Jiang Xi, Li Zongjian, et al.Short-circuit ruggedness and failure mechanisms of Si/SiC hybrid switch[J]. IEEE Transactions on Power Electronics, 2019, 34(3): 2771-2780.
[20] 秦海鸿, 徐克峰, 王丹, 等. SiC MOSFET短路特性[J]. 南京航空航天大学学报, 2018, 50(3): 348-354.
Qin Haihong, Xu Kefeng, Wang Dan, et al.Short-circuit characteristics of SiC MOSFETs[J]. Journal of Nanjing University of Aeronautics & Astronautics, 2018, 50(3): 348-354.
[21] Eni E P, Bęczkowski S, Munk-Nielsen S, et al.Short- circuit degradation of 10kV 10A SiC MOSFET[J]. IEEE Transactions on Power Electronics, 2017, 32(12): 9342-9354.
[22] Wang Zhiqiang, Shi Xiaojie, Tolbert L M, et al.Temperature-dependent short-circuit capability of silicon carbide power MOSFETs[J]. IEEE Transa- ctions on Power Electronics, 2016, 31(2): 1555-1566.
[23] Kadavelugu A, Aeloiza E, Belcastro C.Short-circuit performance of multi-chip SiC MOSFET modules[C]// IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Albuquerque, 2017: 285-290.