The Relationship Between Junction Temperature and Time Delay of Gate Voltage Miller Plateau of IGBT Module
Fang Huachao1,2, Zheng Libing2, Wang Chunlei1,2, Fang Guangrong2, Han Li2
1. School of Information University of Chinese Academy of Science Beijing 100190 China; 2. Institute of Electrical Engineering Chinese Academy of Science Beijing 100180 China
Abstract：The relationship between time delay of gate voltage Miller plateau on insulated gate bipolar transistor (IGBT) module and junction temperature has been researched in this paper. Firstly, the temperature characteristic of Miller plateau time delay has been analyzed. Secondly, a measurement system of gate voltage Miller plateau has been set up, which could measure the delay time of Miller plateau accurately and reliably. Finally, experiments verify the temperature characteristic of Miller plateau time delay. Both the simulation and the experimental results show that the time delay of Miller plateau varies with the junction temperature, which has a good linear relationship. In this paper, the time delay of Miller plateau increases 0.74 ns as the junction temperature increases 1℃.
方化潮, 郑利兵, 王春雷, 方光荣, 韩立. IGBT模块栅极电压米勒平台时延与结温的关系[J]. 电工技术学报, 2016, 31(18): 134-141.
Fang Huachao, Zheng Libing, Wang Chunlei, Fang Guangrong, Han Li. The Relationship Between Junction Temperature and Time Delay of Gate Voltage Miller Plateau of IGBT Module. Transactions of China Electrotechnical Society, 2016, 31(18): 134-141.
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