Abstract：Using SiC MOSFET to replace traditional Si IGBT can achieve higher switching frequency and lower losses, but higher di/dt causes resonance between the SiC MOSFET junction capacitance and parasitic inductance, which further produces high frequency oscillation and overshoot voltage. Considering the system parasitic parameters thoroughly, a small signal model for SiC MOSFET turn-off oscillation is established. Then the conditions for fully decoupling the wire parasitic inductance by decoupling capacitor are derived. The high-frequency oscillation and low-frequency oscillation also analyzed in the frequency domain. On the basis of these, a low frequency oscillation resonance analysis model is proposed to accurately analyze low frequency oscillation in the power circuit. Moreover, an impedance analysis network is established to calculate the low-frequency resonance current. Finally, the simulation and experimental results prove the accuracy of the proposed turn-off oscillation analysis model and the analytical calculation method of the resonance current. These methods provide guidance for the design of system parameters.
余宝伟, 郭希铮, 部旭聪, 刘伟志, 游小杰. 全碳化硅辅助变流器功率回路振荡问题[J]. 电工技术学报, 2021, 36(zk2): 619-626.
Yu Baowei, Guo Xizheng, Bu Xucong, Liu Weizhi, You Xiaojie. Oscillation of Power Circuit of Full SiC Auxiliary Converter. Transactions of China Electrotechnical Society, 2021, 36(zk2): 619-626.
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2021, Vol. 36 
