Abstract:In this paper, two different working modes of a new current source gate driver were studied. In order to research the influence of the system parameters on the loss of the driving circuit under the two working modes, the working principle of the circuit and the power consumption of each part were analyzed in detail. In addition, the power loss of the driving circuit under the two working modes was compared, and the selection method of the current source gate driver under the two working modes was proposed from the perspective of system loss. Finally, the current source gate driver was applied to a modified SEPIC Boost converter, the turn-on and turn-off process of the switch were analyzed through the experimental test, and the comparative analysis was made with the traditional voltage source driver by Si8271, which further verifies the significance of the current source driver for improving the system efficiency.
桑汐坤, 王懿杰, 徐殿国. 电流源驱动电路效率提升及损耗分析研究[J]. 电工技术学报, 2021, 36(zk2): 610-618.
Sang Xikun, Wang Yijie, Xu Dianguo. Research on Loss Analysis and Efficiency Improvement of Current Source Driver. Transactions of China Electrotechnical Society, 2021, 36(zk2): 610-618.
[1] 周稳, 毕大强, 戴瑜兴, 等. 新能源发电低电压穿越的VSG实验平台研制[J]. 电力自动化设备, 2017, 37(1): 107-110. Zhou Wen, Bi Daqiang, Dai Yuxing, et al.Design of VSG testbed for LVRT of renewable energy[J]. Electric Power Automation Equipment, 2017, 37(1): 107-110. [2] 高圣伟, 苏佳, 刘晓明, 等. GaN MOSFET高效谐振驱动电路设计及损耗分析[J]. 天津工业大学学报, 2018, 37(5): 64-67. Gao Shengwei, Su Jia, Liu Xiaoming, et al.Design and loss of high efficient resonant driving circuit of GaN MOSFET[J]. Journal of Tianjin Polytechnic University, 2018, 37(5): 64-67. [3] 赵清林, 崔少威, 袁精, 等. 低压氮化镓器件谐振驱动技术及其反向导通特性[J]. 电工技术学报, 2019, 34(1): 134-136. Zhao Qinglin, Cui Shaowei, Yuan Jing, et al.Resonant drive technology and reverse conduction characteristics of low voltage GaN devices[J]. Transactions of China Electrotechnical Society, 2019, 34(1): 134-136. [4] Masayuki Okamoto, Takaharu Ishibashi, Hiroaki Yamada, et al.Resonant gate driver for a normally on GaN HEMT[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016, 4(3): 926-928. [5] 张建忠, 吴海富, 张雅倩, 等. 一种SiC MOSFET谐振门极驱动电路[J]. 电工技术学报, 2020, 35(16): 3454-3457. Zhang Jianzhong, Wu Haifu, Zhang Yaqian, et al.A resonant gate driver for SiC MOSFET[J]. Transa-ctions of China Electrotechnical Society, 2020, 35(16): 3454-3457. [6] 赵清林, 陈磊, 袁精, 等. 一种适用于GaN器件的谐振驱动电路[J]. 电气自动化设备, 2019, 39(4): 114-116. Zhao Qinglin, Chen Lei, Yuan Jing, et al.A resonant gate driver circuit for GaN device[J]. Electric Power Automation Equipment, 2019, 39(4): 114-116. [7] 刘教民, 李建文, 崔玉龙, 等. 高频谐振逆变器的功率MOS管驱动电路[J]. 电工技术学报, 2011, 26(5): 114-117. Liu Jiaomin, Li Jianwen, Cui Yulong, et al.Power MOSFET gate driver of the high frequency resonant inverter[J]. Transactions of China Electrotechnical Society, 2011, 26(5): 114-117. [8] 员翠平, 刘树林, 赵倩, 等. 功率PMOS管的有源泄放驱动电路研究[J]. 电工技术学报, 2019, 34(2): 529-531. Yuan Cuiping, Liu Shulin, Zhao Qian, et al.Research of drive circuit with active discharging technology for power PMOS[J]. Transactions of China Electro-technical Society, 2019, 34(2): 529-531. [9] 李辉, 黄樟坚, 廖兴林, 等. 一种抑制SiC MOSFET桥臂串扰的改进门极驱动设计[J]. 电工技术学报, 2019, 34(2): 276-278. Li Hui, Huang Zhangjian, Liao Xinglin, et al.An improved SiC MOSFET gate driver design for crosstalk suppression in a phase-leg configuration[J]. Transactions of China Electrotechnical Society, 2019, 34(2): 276-278. [10] 赵清林, 崔少威, 李建楠, 等. 半桥LLC变换器的谐振驱动技术[J]. 电气传动, 2019, 49(9): 17-18. Zhao Qinglin, Cui Shaowei, Li Jiannan, et al.Resonant gate drive technology of half-bridge LLC converter[J]. Electric Drive, 2019, 49(9): 17-18. [11] Eberle W, Zhang Zhiliang, Liu Yanfei, et al.A current source gate driver achieving switching loss savings and gate energy recovery at 1MHz[J]. IEEE Transactions on Power Electronics, 2008, 23(2): 678-691. [12] Eberle W, Liu Yanfei, Sen P C.A new resonant gate-drive circuit with efficient energy recovery and low conduction loss[J]. IEEE Transactions on Indu-strial Electronics, 2008, 55(5): 2213-2221. [13] Wang Yijie, Gao Shanshan, Xu Dianguo.A 1MHz-modified SEPIC with ZVS characteristic and low-voltage stress[J]. IEEE Transactions on Industrial Electronics, 2019, 66(5): 3422-3425.