An Ultra High Frequency Induction Heating Source Based on Unidirectional Pulse Circuit and SiC Device
Shi Xinchun1, Ma Mangyuan1, Chai Yanpeng2, Li Yabin1, Fu Chao1
1. Department of Electrical and Electronic Engineering North China Electric Power University Baoding 071003 China; 2. Baoding Sifang Sanyi Electric Co. Ltd Baoding 071051 China
Abstract:This paper proposes an ultrahigh frequency Induction heating source based on unidirectional pulse circuit and SiC device for the problems of power limitation, voltage-current impulse and switch losses. The RLC parallel resonant load and unidirectional pulse circuit are adopted to increase the output power of the ultrahigh frequency source. A new type of SiC MOSFET is adopted as switch device with short switching time, so the working frequency can be improved. In addition, a large inductor is connected with the bus-bar in series, absorbing the stray inductance of the bus-bar, and the direct current can not generate the voltage impact. Meanwhile, the connection line adopts a simple parallel bus-bar structure and reduces the line stray inductance, so the voltage impact of the switching device will be decreased. The switching device is operated in soft switching model, and the switching loss can be reduced. The working principle and characteristics of the circuit are analyzed and verified by simulation and 1MHz/1kW prototype.
石新春, 马莽原, 柴艳鹏, 李亚斌, 付超. 基于单向脉冲电路和SiC器件的超高频感应加热电源[J]. 电工技术学报, 2021, 36(zk2): 600-609.
Shi Xinchun, Ma Mangyuan, Chai Yanpeng, Li Yabin, Fu Chao. An Ultra High Frequency Induction Heating Source Based on Unidirectional Pulse Circuit and SiC Device. Transactions of China Electrotechnical Society, 2021, 36(zk2): 600-609.
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